FDC8602

Manufacturer :

onsemi

Product Category :

Transistors - FETs, MOSFETs - Arrays

Vgs(th) (Max) @ Id :

4V @ 250µA

Lead Free :

Lead Free

FET Technology :

METAL-OXIDE SEMICONDUCTOR

Gate to Source Voltage (Vgs) :

20V

Lifecycle Status :

ACTIVE (Last Updated: 2 days ago)

ECCN Code :

EAR99

RoHS Status :

ROHS3 Compliant

Element Configuration :

Dual

FET Type :

2 N-Channel (Dual)

Turn-Off Delay Time :

5.4 ns

Transistor Element Material :

SILICON

Mount :

Surface Mount

Mounting Type :

Surface Mount

Rds On (Max) @ Id, Vgs :

350m Ω @ 1.2A, 10V

Height :

1.1mm

FET Feature :

Standard

Drain-source On Resistance-Max :

0.35Ohm

Drain to Source Voltage (Vdss) :

100V

Package / Case :

SOT-23-6 Thin, TSOT-23-6

Number of Elements :

2

Rise Time :

1.7ns

Terminal Form :

Gull wing

Packaging :

Cut Tape (CT)

Length :

3mm

Drain to Source Breakdown Voltage :

100V

Operating Temperature :

-55°C~150°C TJ

Series :

PowerTrench®

Turn On Delay Time :

3.5 ns

Terminal Finish :

Tin (Sn)

Max Power Dissipation :

690mW

Pbfree Code :

yes

Power Dissipation :

690mW

Weight :

36mg

Feedback Cap-Max (Crss) :

5 pF

Gate Charge (Qg) (Max) @ Vgs :

2nC @ 10V

Fall Time (Typ) :

2.3 ns

JEDEC-95 Code :

MO-193AA

Threshold Voltage :

3.2V

Width :

1.7mm

Operating Mode :

ENHANCEMENT MODE

Input Capacitance (Ciss) (Max) @ Vds :

70pF @ 50V

Moisture Sensitivity Level (MSL) :

1 (Unlimited)

Additional Feature :

ULTRA-LOW RESISTANCE

Number of Terminations :

6

Transistor Application :

SWITCHING

Max Junction Temperature (Tj) :

150°C

Number of Pins :

6

Factory Lead Time :

35 Weeks

JESD-609 Code :

e3

Continuous Drain Current (ID) :

1.2A

Radiation Hardening :

No