FDC855N

Manufacturer :

onsemi

Product Category :

Transistors - FETs, MOSFETs - Single

Continuous Drain Current (ID) :

6.1A

Gate to Source Voltage (Vgs) :

20V

Height :

1mm

Moisture Sensitivity Level (MSL) :

1 (Unlimited)

Terminal Form :

Gull wing

Operating Mode :

ENHANCEMENT MODE

Number of Terminations :

6

Rise Time :

2ns

Mount :

Surface Mount

Feedback Cap-Max (Crss) :

95 pF

Package / Case :

SOT-23-6 Thin, TSOT-23-6

Number of Elements :

1

Nominal Vgs :

2 V

Length :

3mm

Number of Pins :

6

Lifecycle Status :

ACTIVE (Last Updated: 2 days ago)

Fall Time (Typ) :

2 ns

REACH SVHC :

No SVHC

Power Dissipation :

1.6W

Terminal Finish :

Tin (Sn)

Current - Continuous Drain (Id) @ 25°C :

6.1A Ta

Rds On (Max) @ Id, Vgs :

27m Ω @ 6.1A, 10V

FET Type :

N-Channel

Gate Charge (Qg) (Max) @ Vgs :

13nC @ 10V

Vgs (Max) :

±20V

Terminal Position :

Dual

Pbfree Code :

yes

Lead Free :

Lead Free

Vgs(th) (Max) @ Id :

3V @ 250µA

Resistance :

27mOhm

JESD-609 Code :

e3

RoHS Status :

ROHS3 Compliant

Drain to Source Breakdown Voltage :

30V

Drive Voltage (Max Rds On,Min Rds On) :

4.5V 10V

Series :

PowerTrench®

Threshold Voltage :

2V

Transistor Element Material :

SILICON

Packaging :

Tape and Reel (TR)

Mounting Type :

Surface Mount

Width :

1.7mm

Operating Temperature :

-55°C~150°C TJ

Turn-Off Delay Time :

14 ns

Turn On Delay Time :

6 ns

Input Capacitance (Ciss) (Max) @ Vds :

655pF @ 15V

Element Configuration :

Single

Weight :

36mg

ECCN Code :

EAR99

Factory Lead Time :

13 Weeks

Radiation Hardening :

No

Power Dissipation-Max :

1.6W Ta

Transistor Application :

SWITCHING

Published :

2007