FCH041N65EF

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Mfr.Part #
FCH041N65EF
Manufacturer
Fairchild Semiconductor
Package / Case
TO-247-4
Datasheet
Download
Description
N-CHANNEL, MOSFET
Stock
2,110
In Stock :
2,110

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Manufacturer :
Fairchild Semiconductor
Product Category :
Transistors - FETs, MOSFETs - Arrays
Mounting Type :
Through Hole
Terminal Finish :
Tin (Sn)
Operating Temperature :
-55°C~150°C TJ
Current - Continuous Drain (Id) @ 25°C :
76A Tc
Time@Peak Reflow Temperature-Max (s) :
NOT SPECIFIED
ECCN Code :
EAR99
Input Capacitance (Ciss) (Max) @ Vds :
12560pF @ 100V
Power Dissipation-Max :
595W Tc
Continuous Drain Current (ID) :
76A
RoHS Status :
ROHS3 Compliant
Drive Voltage (Max Rds On,Min Rds On) :
10V
Drain to Source Voltage (Vdss) :
650V
Series :
FRFET®, SuperFET® II
Gate Charge (Qg) (Max) @ Vgs :
298nC @ 10V
Element Configuration :
Single
Rds On (Max) @ Id, Vgs :
41m Ω @ 38A, 10V
JESD-609 Code :
e3
Factory Lead Time :
12 Weeks
Moisture Sensitivity Level (MSL) :
1 (Unlimited)
Vgs(th) (Max) @ Id :
5V @ 7.6mA
Peak Reflow Temperature (Cel) :
NOT SPECIFIED
Vgs (Max) :
±20V
Package / Case :
TO-247-4
Packaging :
Tube
Pbfree Code :
yes
Lifecycle Status :
ACTIVE (Last Updated: 5 days ago)
Mount :
Through Hole
Weight :
6.289g
HTS Code :
8541.29.00.95
FET Type :
N-Channel
Datasheets
FCH041N65EF
Introducing Transistors - FETs, MOSFETs - Arrays Fairchild Semiconductor FCH041N65EF from Chip IC,where excellence meets affordability. This product stands out with its Mounting Type:Through Hole, Operating Temperature:-55°C~150°C TJ, Package / Case:TO-247-4, FCH041N65EF pinout, FCH041N65EF datasheet PDF, FCH041N65EF amp .Beyond Transistors - FETs, MOSFETs - Arrays Fairchild Semiconductor FCH041N65EF ,we also offer SSM6N57NU,LF, DMN2004DMK-7, AO4629, Our vast inventory has you covered. Contact us now for immediate solutions.

Fairchild Semiconductor FCH041N65EF


N-Channel Tube 41m Ω @ 38A, 10V ±20V 12560pF @ 100V 298nC @ 10V 650V TO-247-4

FCH041N65EFL4 Description


SuperFET? II MOSFET is a brand-new high voltage super-junction (SJ) MOSFET family that is utilizing charge balance technology for outstanding low on-resistance and lower gate charge performance. This technology is tailored to minimize conduction loss and provide superior switching performance, dv/dt rate, and higher avalanche energy. Consequently, SuperFET II MOSFET is very suitable for switching power applications such as PFC, server/telecom power, FPD TV power, ATX power, and industrial power applications. SuperFET II FRFET? MOSFET’s optimized body diode reverse recovery performance can remove the additional component and improve system reliability.



FCH041N65EFL4 Features


  • RoHS Compliant

  • 700 V @ TJ = 150°C

  • Typ. RDS(on) = 36 mΩ

  • 100% Avalanche Tested

  • Ultra Low Gate Charge (Typ. Qg = 229 nC)

  • Low Effective Output Capacitance (Typ. Coss(eff.) = 631 pF)



FCH041N65EFL4 Applications


  • Solar inverter

  • LCD/LED/PDP TV 

  • AC-DC Power Supplies

  • Telecom/Server/Power Supplies


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