FCH041N60E

Manufacturer :

onsemi

Product Category :

Transistors - FETs, MOSFETs - Single

JESD-30 Code :

R-PSFM-T3

Drive Voltage (Max Rds On,Min Rds On) :

10V

Drain to Source Breakdown Voltage :

600V

Power Dissipation-Max :

592W Tc

Power Dissipation :

592W

Lifecycle Status :

ACTIVE (Last Updated: 5 days ago)

Current - Continuous Drain (Id) @ 25°C :

77A Tc

Height :

20.82mm

Continuous Drain Current (ID) :

77A

Reach Compliance Code :

not_compliant

Turn On Delay Time :

50 ns

RoHS Status :

ROHS3 Compliant

Mount :

Through Hole

Gate to Source Voltage (Vgs) :

20V

Vgs(th) (Max) @ Id :

3.5V @ 250µA

Number of Pins :

2

Element Configuration :

Single

Package / Case :

TO-247-3

Series :

SuperFET® II

ECCN Code :

EAR99

Published :

2013

Weight :

6.39g

JESD-609 Code :

e3

Input Capacitance (Ciss) (Max) @ Vds :

13700pF @ 100V

Pbfree Code :

yes

Transistor Element Material :

SILICON

Lead Free :

Lead Free

Number of Elements :

1

Mounting Type :

Through Hole

Packaging :

Tube

Length :

15.87mm

FET Type :

N-Channel

Time@Peak Reflow Temperature-Max (s) :

NOT SPECIFIED

Terminal Finish :

Tin (Sn)

Rds On (Max) @ Id, Vgs :

41m Ω @ 39A, 10V

Number of Terminations :

3

Gate Charge (Qg) (Max) @ Vgs :

380nC @ 10V

Peak Reflow Temperature (Cel) :

NOT SPECIFIED

Rise Time :

50ns

Fall Time (Typ) :

85 ns

Width :

4.82mm

Transistor Application :

SWITCHING

Turn-Off Delay Time :

320 ns

Vgs (Max) :

±20V

Moisture Sensitivity Level (MSL) :

1 (Unlimited)

Operating Temperature :

-55°C~150°C TJ

Operating Mode :

ENHANCEMENT MODE

Factory Lead Time :

12 Weeks