FCB20N60F

Manufacturer :

Fairchild Semiconductor

Product Category :

Transistors - FETs, MOSFETs - Arrays

Transistor Element Material :

SILICON

Base Part Number :

FCB20N60

Power Dissipation :

208W

Drain to Source Breakdown Voltage :

600V

Input Capacitance (Ciss) (Max) @ Vds :

3080pF @ 25V

Lifecycle Status :

ACTIVE (Last Updated: 3 days ago)

Drive Voltage (Max Rds On,Min Rds On) :

10V

Resistance :

190mOhm

Radiation Hardening :

No

Moisture Sensitivity Level (MSL) :

1 (Unlimited)

Element Configuration :

Single

Pbfree Code :

yes

ECCN Code :

EAR99

Current Rating :

20A

Gate Charge (Qg) (Max) @ Vgs :

98nC @ 10V

Case Connection :

DRAIN

RoHS Status :

ROHS3 Compliant

Rise Time :

140ns

Transistor Application :

SWITCHING

Current - Continuous Drain (Id) @ 25°C :

20A Tc

Width :

9.65mm

Fall Time (Typ) :

65 ns

Number of Pins :

3

Operating Mode :

ENHANCEMENT MODE

Weight :

1.31247g

Rds On (Max) @ Id, Vgs :

190m Ω @ 10A, 10V

Number of Terminations :

2

Number of Elements :

1

Turn-Off Delay Time :

230 ns

JESD-609 Code :

e3

Published :

2008

JESD-30 Code :

R-PSSO-G2

Operating Temperature :

-55°C~150°C TJ

Height :

4.83mm

Voltage - Rated DC :

600V

Length :

10.67mm

FET Type :

N-Channel

Turn On Delay Time :

62 ns

Vgs (Max) :

±30V

Gate to Source Voltage (Vgs) :

30V

Package / Case :

TO-263-3, D2Pak (2 Leads + Tab), TO-263AB

Terminal Form :

Gull wing

Avalanche Energy Rating (Eas) :

690 mJ

Mount :

Surface Mount

Lead Free :

Lead Free

Factory Lead Time :

4 Weeks

Mounting Type :

Surface Mount

Power Dissipation-Max :

208W Tc

Vgs(th) (Max) @ Id :

5V @ 250μA

Contact Plating :

Tin

Continuous Drain Current (ID) :

20A

Series :

SuperFET™

Pulsed Drain Current-Max (IDM) :

60A

Packaging :

Tape and Reel (TR)