FCB20N60FTM

Manufacturer :

onsemi

Product Category :

Transistors - FETs, MOSFETs - Single

Weight :

1.31247g

Mount :

Surface Mount

Vgs (Max) :

±30V

Number of Terminations :

2

Voltage - Rated DC :

600V

Turn-Off Delay Time :

230 ns

Continuous Drain Current (ID) :

20A

Length :

10.67mm

Turn On Delay Time :

62 ns

Mounting Type :

Surface Mount

Pulsed Drain Current-Max (IDM) :

60A

Published :

2008

Lead Free :

Lead Free

Contact Plating :

Tin

Element Configuration :

Single

Case Connection :

DRAIN

Transistor Application :

SWITCHING

Moisture Sensitivity Level (MSL) :

1 (Unlimited)

Rds On (Max) @ Id, Vgs :

190m Ω @ 10A, 10V

Pbfree Code :

yes

Number of Pins :

3

Current - Continuous Drain (Id) @ 25°C :

20A Tc

Base Part Number :

FCB20N60

Gate Charge (Qg) (Max) @ Vgs :

98nC @ 10V

Resistance :

190mOhm

Series :

SuperFET™

Input Capacitance (Ciss) (Max) @ Vds :

3080pF @ 25V

Packaging :

Tape and Reel (TR)

ECCN Code :

EAR99

Drain to Source Breakdown Voltage :

600V

Current Rating :

20A

Width :

9.65mm

Vgs(th) (Max) @ Id :

5V @ 250μA

Drive Voltage (Max Rds On,Min Rds On) :

10V

Gate to Source Voltage (Vgs) :

30V

Power Dissipation :

208W

Power Dissipation-Max :

208W Tc

Terminal Form :

Gull wing

Number of Elements :

1

Package / Case :

TO-263-3, D2Pak (2 Leads + Tab), TO-263AB

Factory Lead Time :

4 Weeks

Operating Mode :

ENHANCEMENT MODE

Lifecycle Status :

ACTIVE (Last Updated: 3 days ago)

JESD-609 Code :

e3

Radiation Hardening :

No

Rise Time :

140ns

Fall Time (Typ) :

65 ns

Avalanche Energy Rating (Eas) :

690 mJ

Transistor Element Material :

SILICON

Operating Temperature :

-55°C~150°C TJ

JESD-30 Code :

R-PSSO-G2

FET Type :

N-Channel

RoHS Status :

ROHS3 Compliant

Height :

4.83mm