EMF22T2R

Manufacturer :

ROHM Semiconductor

Product Category :

Transistors - Bipolar (BJT) - Arrays, Pre-Biased

Additional Feature :

BUILT IN BIAS RESISTOR RATIO 1

Polarity :

NPN

Number of Terminations :

6

Peak Reflow Temperature (Cel) :

260

Package / Case :

SOT-563, SOT-666

Current - Collector Cutoff (Max) :

500nA

Voltage - Collector Emitter Breakdown (Max) :

50V 12V

Number of Pins :

6

Element Configuration :

Dual

Collector Emitter Breakdown Voltage :

12V

DC Current Gain (hFE) (Min) @ Ic, Vce :

30 @ 5mA 5V / 270 @ 10mA 2V

Number of Elements :

2

Published :

2003

Mounting Type :

Surface Mount

Transistor Type :

1 NPN Pre-Biased, 1 NPN

Max Power Dissipation :

150mW

Packaging :

Tape and Reel (TR)

Time@Peak Reflow Temperature-Max (s) :

10

Frequency - Transition :

250MHz 320MHz

Terminal Form :

Flat

Current - Collector (Ic) (Max) :

100mA 500mA

Transistor Application :

SWITCHING

Vce Saturation (Max) @ Ib, Ic :

300mV @ 500μA, 10mA / 250mV @ 10mA, 200mA

Terminal Finish :

TIN COPPER

Max Operating Temperature :

150°C

hFE Min :

270

Lead Free :

Lead Free

Mount :

Surface Mount

Moisture Sensitivity Level (MSL) :

1 (Unlimited)

Resistor - Base (R1) :

10k Ω

ECCN Code :

EAR99

Pin Count :

6

JESD-609 Code :

e2

RoHS Status :

ROHS3 Compliant

Min Operating Temperature :

-55°C

Resistor - Emitter Base (R2) :

10k Ω

Qualification Status :

Not Qualified

HTS Code :

8541.21.00.75

Collector Emitter Voltage (VCEO) :

300mV

Transition Frequency :

250MHz

Current Rating :

100mA

Max Collector Current :

500mA