EMB10T2R

Manufacturer :

ROHM Semiconductor

Product Category :

Transistors - Bipolar (BJT) - Arrays, Pre-Biased

Frequency - Transition :

250MHz

Max Power Dissipation :

150mW

Vce Saturation (Max) @ Ib, Ic :

300mV @ 250µA, 5mA

Terminal Form :

Flat

Power Dissipation :

150mW

Mounting Type :

Surface Mount

Base Part Number :

MB10

Number of Terminations :

6

Pbfree Code :

yes

Transistor Application :

SWITCHING

DC Current Gain (hFE) (Min) @ Ic, Vce :

80 @ 10mA 5V

Collector Emitter Breakdown Voltage :

50V

Max Operating Temperature :

150°C

Radiation Hardening :

No

Min Operating Temperature :

-55°C

Number of Pins :

6

Moisture Sensitivity Level (MSL) :

1 (Unlimited)

Element Configuration :

Dual

Transition Frequency :

250MHz

Voltage - Rated DC :

-50V

Current - Collector Cutoff (Max) :

500nA

JESD-609 Code :

e2

Continuous Collector Current :

-100mA

Current Rating :

-100mA

Polarity :

PNP

HTS Code :

8541.21.00.75

Terminal Finish :

Tin/Copper (Sn/Cu)

Transistor Type :

2 PNP - Pre-Biased (Dual)

Packaging :

Tape and Reel (TR)

Factory Lead Time :

13 Weeks

Collector Emitter Voltage (VCEO) :

300mV

RoHS Status :

ROHS3 Compliant

Resistor - Base (R1) :

2.2k Ω

Lead Free :

Lead Free

Pin Count :

6

Resistor - Emitter Base (R2) :

47k Ω

Package / Case :

SOT-563, SOT-666

Number of Elements :

2

Max Breakdown Voltage :

50V

Peak Reflow Temperature (Cel) :

260

Published :

2004

Max Collector Current :

100mA

ECCN Code :

EAR99

hFE Min :

80

Time@Peak Reflow Temperature-Max (s) :

10

Mount :

Surface Mount