EMB11T2R

Manufacturer :

ROHM Semiconductor

Product Category :

Transistors - Bipolar (BJT) - Arrays, Pre-Biased

Number of Elements :

2

Transistor Type :

2 PNP - Pre-Biased (Dual)

Mount :

Surface Mount

JESD-609 Code :

e2

Pbfree Code :

yes

Additional Feature :

BUILT-IN BIAS RESISTOR RATIO IS 1

Max Power Dissipation :

150mW

Packaging :

Tape and Reel (TR)

Voltage - Rated DC :

-50V

Resistor - Base (R1) :

10k Ω

Collector Emitter Breakdown Voltage :

50V

Min Operating Temperature :

-55°C

Current - Collector Cutoff (Max) :

500nA

Resistor - Emitter Base (R2) :

10k Ω

Transition Frequency :

250MHz

Transistor Application :

SWITCHING

Base Part Number :

MB11

Lead Free :

Lead Free

Frequency - Transition :

250MHz

hFE Min :

20

Polarity :

PNP

Published :

2004

Time@Peak Reflow Temperature-Max (s) :

10

Max Breakdown Voltage :

50V

Power Dissipation :

150mW

Terminal Form :

Flat

Number of Terminations :

6

Continuous Collector Current :

-100mA

Radiation Hardening :

No

Max Operating Temperature :

150°C

Mounting Type :

Surface Mount

Peak Reflow Temperature (Cel) :

260

Number of Pins :

6

Max Collector Current :

100mA

Current Rating :

-50mA

HTS Code :

8541.21.00.75

Moisture Sensitivity Level (MSL) :

1 (Unlimited)

Collector Emitter Voltage (VCEO) :

300mV

Factory Lead Time :

13 Weeks

Pin Count :

6

ECCN Code :

EAR99

Terminal Finish :

TIN COPPER

Element Configuration :

Dual

RoHS Status :

ROHS3 Compliant

DC Current Gain (hFE) (Min) @ Ic, Vce :

20 @ 5mA 5V

Package / Case :

SOT-563, SOT-666

Vce Saturation (Max) @ Ib, Ic :

300mV @ 500μA, 10mA