ECH8659-TL-W

Manufacturer :

onsemi

Product Category :

Transistors - FETs, MOSFETs - Arrays

Pulsed Drain Current-Max (IDM) :

40A

Continuous Drain Current (ID) :

7A

Lifecycle Status :

ACTIVE (Last Updated: 1 day ago)

Configuration :

SEPARATE, 2 ELEMENTS WITH BUILT-IN DIODE

Time@Peak Reflow Temperature-Max (s) :

NOT SPECIFIED

Peak Reflow Temperature (Cel) :

NOT SPECIFIED

FET Type :

2 N-Channel (Dual)

JESD-30 Code :

R-XDSO-F8

Packaging :

Tape and Reel (TR)

Lead Free :

Lead Free

Number of Terminations :

8

Reach Compliance Code :

not_compliant

FET Feature :

Logic Level Gate, 4V Drive

DS Breakdown Voltage-Min :

30V

Transistor Application :

SWITCHING

Additional Feature :

ESD PROTECTED

Drain Current-Max (Abs) (ID) :

7A

Rds On (Max) @ Id, Vgs :

24m Ω @ 3.5A, 10V

Factory Lead Time :

23 Weeks

RoHS Status :

ROHS3 Compliant

Package / Case :

8-SMD, Flat Lead

Surface Mount :

yes

Published :

2017

Transistor Element Material :

SILICON

Input Capacitance (Ciss) (Max) @ Vds :

710pF @ 10V

Operating Temperature :

150°C TJ

Max Power Dissipation :

1.3W

Power - Max :

1.3W

Mounting Type :

Surface Mount

Operating Mode :

ENHANCEMENT MODE

JESD-609 Code :

e6

Number of Elements :

2

Pbfree Code :

yes

Moisture Sensitivity Level (MSL) :

1 (Unlimited)

Vgs(th) (Max) @ Id :

2.6V @ 1mA

Gate Charge (Qg) (Max) @ Vgs :

11.8nC @ 10V

Drain-source On Resistance-Max :

0.024Ohm

Drain to Source Voltage (Vdss) :

30V

Terminal Finish :

Tin/Bismuth (Sn/Bi)

FET Technology :

METAL-OXIDE SEMICONDUCTOR