ECH8102-TL-H
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- Mfr.Part #
- ECH8102-TL-H
- Manufacturer
- onsemi
- Package / Case
- 8-SMD, Flat Lead
- Datasheet
- Download
- Description
- TRANS PNP 30V 12A 8ECH
- Stock
- 1,228
- In Stock ：
- 1,228
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- Manufacturer :
- onsemi
- Product Category :
- Transistors - Bipolar (BJT) - Single
- Max Collector Current :
- 12A
- Number of Pins :
- 8
- Factory Lead Time :
- 2 Weeks
- ECCN Code :
- EAR99
- Polarity/Channel Type :
- PNP
- Packaging :
- Tape and Reel (TR)
- Number of Terminations :
- 8
- JESD-609 Code :
- e6
- Pbfree Code :
- yes
- RoHS Status :
- ROHS3 Compliant
- Terminal Finish :
- Tin/Bismuth (Sn/Bi)
- Moisture Sensitivity Level (MSL) :
- 1 (Unlimited)
- Mounting Type :
- Surface Mount
- Collector Emitter Breakdown Voltage :
- 30V
- Transistor Application :
- SWITCHING
- Transition Frequency :
- 140MHz
- Published :
- 2013
- Surface Mount :
- yes
- Radiation Hardening :
- No
- DC Current Gain (hFE) (Min) @ Ic, Vce :
- 200 @ 500mA 2V
- Power - Max :
- 1.6W
- Max Power Dissipation :
- 1.6W
- Collector Base Voltage (VCBO) :
- 30V
- Lead Free :
- Lead Free
- Current - Collector Cutoff (Max) :
- 100nA ICBO
- Frequency - Transition :
- 140MHz
- Terminal Position :
- Dual
- Transistor Type :
- PNP
- Emitter Base Voltage (VEBO) :
- -6V
- Collector Emitter Voltage (VCEO) :
- 135mV
- Pin Count :
- 8
- Package / Case :
- 8-SMD, Flat Lead
- Number of Elements :
- 1
- Configuration :
- Single
- hFE Min :
- 200
- Operating Temperature :
- 150°C TJ
- Lifecycle Status :
- ACTIVE (Last Updated: 1 day ago)
- Transistor Element Material :
- SILICON
- Max Breakdown Voltage :
- 30V
- Vce Saturation (Max) @ Ib, Ic :
- 135mV @ 300mA, 6A
- Datasheets
- ECH8102-TL-H
PNP 150°C TJ 100nA ICBO 1 Elements 8 Terminations SILICON PNP 8-SMD, Flat Lead Tape & Reel (TR) Surface Mount
ECH8102-TL-H Overview
In this device, the DC current gain is 200 @ 500mA 2V, which is the ratio between the base current and the collector current.Single BJT transistor means that Ic is at Single BJT transistors maximum value (saturated), so the vce saturation(Max) is equal to 135mV @ 300mA, 6A.With the emitter base voltage set at -6V, an efficient operation can be achieved.Single BJT transistor contains a transSingle BJT transistorion frequency of 140MHz.Input voltage breakdown is available at 30V volts.Single BJT transistor is possible for the collector current to fall as low as 12A volts at Single BJT transistors maximum.
ECH8102-TL-H Features
the DC current gain for this device is 200 @ 500mA 2V
the vce saturation(Max) is 135mV @ 300mA, 6A
the emitter base voltage is kept at -6V
a transition frequency of 140MHz
ECH8102-TL-H Applications
There are a lot of ON Semiconductor
ECH8102-TL-H applications of single BJT transistors.
- Inverter
- Interface
- Driver
- Muting
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