ECH8102-TL-H

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Mfr.Part #
ECH8102-TL-H
Manufacturer
onsemi
Package / Case
8-SMD, Flat Lead
Datasheet
Download
Description
TRANS PNP 30V 12A 8ECH
Stock
1,228
In Stock :
1,228

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Manufacturer :
onsemi
Product Category :
Transistors - Bipolar (BJT) - Single
Package / Case :
8-SMD, Flat Lead
Mounting Type :
Surface Mount
Published :
2013
Factory Lead Time :
2 Weeks
JESD-609 Code :
e6
Transistor Application :
SWITCHING
Configuration :
Single
Vce Saturation (Max) @ Ib, Ic :
135mV @ 300mA, 6A
Max Collector Current :
12A
Power - Max :
1.6W
Number of Terminations :
8
Frequency - Transition :
140MHz
Lifecycle Status :
ACTIVE (Last Updated: 1 day ago)
Emitter Base Voltage (VEBO) :
-6V
Pbfree Code :
yes
Number of Pins :
8
Terminal Position :
Dual
ECCN Code :
EAR99
Collector Base Voltage (VCBO) :
30V
RoHS Status :
ROHS3 Compliant
Radiation Hardening :
No
Max Breakdown Voltage :
30V
Transition Frequency :
140MHz
Polarity/Channel Type :
PNP
Max Power Dissipation :
1.6W
Moisture Sensitivity Level (MSL) :
1 (Unlimited)
hFE Min :
200
Current - Collector Cutoff (Max) :
100nA ICBO
DC Current Gain (hFE) (Min) @ Ic, Vce :
200 @ 500mA 2V
Collector Emitter Voltage (VCEO) :
135mV
Surface Mount :
yes
Transistor Type :
PNP
Operating Temperature :
150°C TJ
Lead Free :
Lead Free
Terminal Finish :
Tin/Bismuth (Sn/Bi)
Number of Elements :
1
Pin Count :
8
Transistor Element Material :
SILICON
Packaging :
Tape and Reel (TR)
Collector Emitter Breakdown Voltage :
30V
Datasheets
ECH8102-TL-H
Introducing Transistors - Bipolar (BJT) - Single onsemi ECH8102-TL-H from Chip IC,where excellence meets affordability. This product stands out with its Package / Case:8-SMD, Flat Lead, Mounting Type:Surface Mount, Number of Terminations:8, Number of Pins:8, Operating Temperature:150°C TJ, ECH8102-TL-H pinout, ECH8102-TL-H datasheet PDF, ECH8102-TL-H amp .Beyond Transistors - Bipolar (BJT) - Single onsemi ECH8102-TL-H ,we also offer BC817-40,235, BC817-40,215, BC807-40,215, Our vast inventory has you covered. Contact us now for immediate solutions.

onsemi ECH8102-TL-H


PNP 150°C TJ 100nA ICBO 1 Elements 8 Terminations SILICON PNP 8-SMD, Flat Lead Tape & Reel (TR) Surface Mount

ECH8102-TL-H Overview


In this device, the DC current gain is 200 @ 500mA 2V, which is the ratio between the base current and the collector current.Single BJT transistor means that Ic is at Single BJT transistors maximum value (saturated), so the vce saturation(Max) is equal to 135mV @ 300mA, 6A.With the emitter base voltage set at -6V, an efficient operation can be achieved.Single BJT transistor contains a transSingle BJT transistorion frequency of 140MHz.Input voltage breakdown is available at 30V volts.Single BJT transistor is possible for the collector current to fall as low as 12A volts at Single BJT transistors maximum.

ECH8102-TL-H Features


the DC current gain for this device is 200 @ 500mA 2V
the vce saturation(Max) is 135mV @ 300mA, 6A
the emitter base voltage is kept at -6V
a transition frequency of 140MHz


ECH8102-TL-H Applications


There are a lot of ON Semiconductor
ECH8102-TL-H applications of single BJT transistors.


  • Inverter
  • Interface
  • Driver
  • Muting
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