ECH8102-TL-H
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- Mfr.Part #
- ECH8102-TL-H
- Manufacturer
- onsemi
- Package / Case
- 8-SMD, Flat Lead
- Datasheet
- Download
- Description
- TRANS PNP 30V 12A 8ECH
- Stock
- 1,228
- In Stock ：
- 1,228
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- Manufacturer :
- onsemi
- Product Category :
- Transistors - Bipolar (BJT) - Single
- Collector Emitter Voltage (VCEO) :
- 135mV
- Lead Free :
- Lead Free
- Polarity/Channel Type :
- PNP
- Number of Elements :
- 1
- Operating Temperature :
- 150°C TJ
- Transistor Element Material :
- SILICON
- Max Power Dissipation :
- 1.6W
- Transistor Application :
- SWITCHING
- Transistor Type :
- PNP
- Lifecycle Status :
- ACTIVE (Last Updated: 1 day ago)
- Transition Frequency :
- 140MHz
- Terminal Position :
- Dual
- Package / Case :
- 8-SMD, Flat Lead
- Radiation Hardening :
- No
- Current - Collector Cutoff (Max) :
- 100nA ICBO
- Number of Pins :
- 8
- Max Breakdown Voltage :
- 30V
- RoHS Status :
- ROHS3 Compliant
- Configuration :
- Single
- Terminal Finish :
- Tin/Bismuth (Sn/Bi)
- Packaging :
- Tape and Reel (TR)
- Vce Saturation (Max) @ Ib, Ic :
- 135mV @ 300mA, 6A
- Collector Emitter Breakdown Voltage :
- 30V
- DC Current Gain (hFE) (Min) @ Ic, Vce :
- 200 @ 500mA 2V
- Number of Terminations :
- 8
- Collector Base Voltage (VCBO) :
- 30V
- Mounting Type :
- Surface Mount
- Pin Count :
- 8
- Max Collector Current :
- 12A
- ECCN Code :
- EAR99
- Emitter Base Voltage (VEBO) :
- -6V
- Moisture Sensitivity Level (MSL) :
- 1 (Unlimited)
- Power - Max :
- 1.6W
- hFE Min :
- 200
- Pbfree Code :
- yes
- Frequency - Transition :
- 140MHz
- JESD-609 Code :
- e6
- Surface Mount :
- yes
- Factory Lead Time :
- 2 Weeks
- Published :
- 2013
- Datasheets
- ECH8102-TL-H
PNP 150°C TJ 100nA ICBO 1 Elements 8 Terminations SILICON PNP 8-SMD, Flat Lead Tape & Reel (TR) Surface Mount
ECH8102-TL-H Overview
In this device, the DC current gain is 200 @ 500mA 2V, which is the ratio between the base current and the collector current.Single BJT transistor means that Ic is at Single BJT transistors maximum value (saturated), so the vce saturation(Max) is equal to 135mV @ 300mA, 6A.With the emitter base voltage set at -6V, an efficient operation can be achieved.Single BJT transistor contains a transSingle BJT transistorion frequency of 140MHz.Input voltage breakdown is available at 30V volts.Single BJT transistor is possible for the collector current to fall as low as 12A volts at Single BJT transistors maximum.
ECH8102-TL-H Features
the DC current gain for this device is 200 @ 500mA 2V
the vce saturation(Max) is 135mV @ 300mA, 6A
the emitter base voltage is kept at -6V
a transition frequency of 140MHz
ECH8102-TL-H Applications
There are a lot of ON Semiconductor
ECH8102-TL-H applications of single BJT transistors.
- Inverter
- Interface
- Driver
- Muting
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