ECH8102-TL-H

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Mfr.Part #
ECH8102-TL-H
Manufacturer
onsemi
Package / Case
8-SMD, Flat Lead
Datasheet
Download
Description
TRANS PNP 30V 12A 8ECH
Stock
1,228
In Stock :
1,228

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Manufacturer :
onsemi
Product Category :
Transistors - Bipolar (BJT) - Single
Power - Max :
1.6W
hFE Min :
200
Collector Emitter Voltage (VCEO) :
135mV
Max Breakdown Voltage :
30V
RoHS Status :
ROHS3 Compliant
Frequency - Transition :
140MHz
Terminal Position :
Dual
Max Power Dissipation :
1.6W
Radiation Hardening :
No
Number of Elements :
1
Published :
2013
Moisture Sensitivity Level (MSL) :
1 (Unlimited)
Collector Base Voltage (VCBO) :
30V
Package / Case :
8-SMD, Flat Lead
Current - Collector Cutoff (Max) :
100nA ICBO
Surface Mount :
yes
Pbfree Code :
yes
Transistor Element Material :
SILICON
Collector Emitter Breakdown Voltage :
30V
Factory Lead Time :
2 Weeks
Lifecycle Status :
ACTIVE (Last Updated: 1 day ago)
Emitter Base Voltage (VEBO) :
-6V
Lead Free :
Lead Free
Number of Terminations :
8
Terminal Finish :
Tin/Bismuth (Sn/Bi)
Vce Saturation (Max) @ Ib, Ic :
135mV @ 300mA, 6A
Transition Frequency :
140MHz
Packaging :
Tape and Reel (TR)
JESD-609 Code :
e6
DC Current Gain (hFE) (Min) @ Ic, Vce :
200 @ 500mA 2V
ECCN Code :
EAR99
Transistor Type :
PNP
Operating Temperature :
150°C TJ
Mounting Type :
Surface Mount
Pin Count :
8
Polarity/Channel Type :
PNP
Number of Pins :
8
Max Collector Current :
12A
Transistor Application :
SWITCHING
Configuration :
Single
Datasheets
ECH8102-TL-H
Introducing Transistors - Bipolar (BJT) - Single onsemi ECH8102-TL-H from Chip IC,where excellence meets affordability. This product stands out with its Package / Case:8-SMD, Flat Lead, Number of Terminations:8, Operating Temperature:150°C TJ, Mounting Type:Surface Mount, Number of Pins:8, ECH8102-TL-H pinout, ECH8102-TL-H datasheet PDF, ECH8102-TL-H amp .Beyond Transistors - Bipolar (BJT) - Single onsemi ECH8102-TL-H ,we also offer BC817-40,235, BC817-40,215, BC807-40,215, Our vast inventory has you covered. Contact us now for immediate solutions.

onsemi ECH8102-TL-H


PNP 150°C TJ 100nA ICBO 1 Elements 8 Terminations SILICON PNP 8-SMD, Flat Lead Tape & Reel (TR) Surface Mount

ECH8102-TL-H Overview


In this device, the DC current gain is 200 @ 500mA 2V, which is the ratio between the base current and the collector current.Single BJT transistor means that Ic is at Single BJT transistors maximum value (saturated), so the vce saturation(Max) is equal to 135mV @ 300mA, 6A.With the emitter base voltage set at -6V, an efficient operation can be achieved.Single BJT transistor contains a transSingle BJT transistorion frequency of 140MHz.Input voltage breakdown is available at 30V volts.Single BJT transistor is possible for the collector current to fall as low as 12A volts at Single BJT transistors maximum.

ECH8102-TL-H Features


the DC current gain for this device is 200 @ 500mA 2V
the vce saturation(Max) is 135mV @ 300mA, 6A
the emitter base voltage is kept at -6V
a transition frequency of 140MHz


ECH8102-TL-H Applications


There are a lot of ON Semiconductor
ECH8102-TL-H applications of single BJT transistors.


  • Inverter
  • Interface
  • Driver
  • Muting
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