ECH8102-TL-H
- Mfr.Part #
- ECH8102-TL-H
- Manufacturer
- onsemi
- Package / Case
- 8-SMD, Flat Lead
- Datasheet
- Download
- Description
- TRANS PNP 30V 12A 8ECH
- Stock
- 1,228
- In Stock :
- 1,228
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- Manufacturer :
- onsemi
- Product Category :
- Transistors - Bipolar (BJT) - Single
- Package / Case :
- 8-SMD, Flat Lead
- Mounting Type :
- Surface Mount
- Published :
- 2013
- Factory Lead Time :
- 2 Weeks
- JESD-609 Code :
- e6
- Transistor Application :
- SWITCHING
- Configuration :
- Single
- Vce Saturation (Max) @ Ib, Ic :
- 135mV @ 300mA, 6A
- Max Collector Current :
- 12A
- Power - Max :
- 1.6W
- Number of Terminations :
- 8
- Frequency - Transition :
- 140MHz
- Lifecycle Status :
- ACTIVE (Last Updated: 1 day ago)
- Emitter Base Voltage (VEBO) :
- -6V
- Pbfree Code :
- yes
- Number of Pins :
- 8
- Terminal Position :
- Dual
- ECCN Code :
- EAR99
- Collector Base Voltage (VCBO) :
- 30V
- RoHS Status :
- ROHS3 Compliant
- Radiation Hardening :
- No
- Max Breakdown Voltage :
- 30V
- Transition Frequency :
- 140MHz
- Polarity/Channel Type :
- PNP
- Max Power Dissipation :
- 1.6W
- Moisture Sensitivity Level (MSL) :
- 1 (Unlimited)
- hFE Min :
- 200
- Current - Collector Cutoff (Max) :
- 100nA ICBO
- DC Current Gain (hFE) (Min) @ Ic, Vce :
- 200 @ 500mA 2V
- Collector Emitter Voltage (VCEO) :
- 135mV
- Surface Mount :
- yes
- Transistor Type :
- PNP
- Operating Temperature :
- 150°C TJ
- Lead Free :
- Lead Free
- Terminal Finish :
- Tin/Bismuth (Sn/Bi)
- Number of Elements :
- 1
- Pin Count :
- 8
- Transistor Element Material :
- SILICON
- Packaging :
- Tape and Reel (TR)
- Collector Emitter Breakdown Voltage :
- 30V
- Datasheets
- ECH8102-TL-H

PNP 150°C TJ 100nA ICBO 1 Elements 8 Terminations SILICON PNP 8-SMD, Flat Lead Tape & Reel (TR) Surface Mount
ECH8102-TL-H Overview
In this device, the DC current gain is 200 @ 500mA 2V, which is the ratio between the base current and the collector current.Single BJT transistor means that Ic is at Single BJT transistors maximum value (saturated), so the vce saturation(Max) is equal to 135mV @ 300mA, 6A.With the emitter base voltage set at -6V, an efficient operation can be achieved.Single BJT transistor contains a transSingle BJT transistorion frequency of 140MHz.Input voltage breakdown is available at 30V volts.Single BJT transistor is possible for the collector current to fall as low as 12A volts at Single BJT transistors maximum.
ECH8102-TL-H Features
the DC current gain for this device is 200 @ 500mA 2V
the vce saturation(Max) is 135mV @ 300mA, 6A
the emitter base voltage is kept at -6V
a transition frequency of 140MHz
ECH8102-TL-H Applications
There are a lot of ON Semiconductor
ECH8102-TL-H applications of single BJT transistors.
- Inverter
- Interface
- Driver
- Muting
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