DSC9G0200L

Manufacturer :

Panasonic

Product Category :

Transistors - Bipolar (BJT) - RF

Gain Bandwidth Product :

650MHz

Packaging :

Tape and Reel (TR)

Collector Emitter Breakdown Voltage :

20V

hFE Min :

65

Width :

850μm

Factory Lead Time :

10 Weeks

Noise Figure (dB Typ @ f) :

3.3dB @ 100MHz

Max Power Dissipation :

125mW

Operating Temperature :

150°C TJ

Mounting Type :

Surface Mount

Polarity/Channel Type :

NPN

Published :

2016

Package / Case :

SC-89, SOT-490

Number of Elements :

1

Transition Frequency :

650MHz

Length :

1.6mm

Mount :

Surface Mount

Terminal Position :

Dual

Highest Frequency Band :

VERY HIGH FREQUENCY B

Terminal Form :

Flat

Moisture Sensitivity Level (MSL) :

1 (Unlimited)

Number of Terminations :

3

ECCN Code :

EAR99

Max Breakdown Voltage :

20V

Transistor Application :

AMPLIFIER

Height :

600μm

Element Configuration :

Single

Base Part Number :

DSC9G02

Max Frequency :

650MHz

Radiation Hardening :

No

Collector Emitter Voltage (VCEO) :

20V

HTS Code :

8541.21.00.75

Transistor Type :

NPN

Number of Pins :

3

Transistor Element Material :

SILICON

Collector Base Voltage (VCBO) :

30V

DC Current Gain (hFE) (Min) @ Ic, Vce :

65 @ 1mA 6V

Max Collector Current :

15mA

RoHS Status :

RoHS Compliant

Gain :

24dB

Emitter Base Voltage (VEBO) :

3V