DSA9G01C0L

Manufacturer :

Panasonic

Product Category :

Transistors - Bipolar (BJT) - RF

Collector Emitter Voltage (VCEO) :

-20V

Height :

600μm

Published :

2011

Element Configuration :

Single

Peak Reflow Temperature (Cel) :

NOT SPECIFIED

DC Current Gain-Min (hFE) :

110

Max Collector Current :

30mA

Number of Pins :

3

Max Power Dissipation :

125mW

Collector Emitter Saturation Voltage :

-100mV

Max Frequency :

300MHz

Emitter Base Voltage (VEBO) :

-5V

Polarity :

NPN

Terminal Position :

Dual

Width :

850μm

Time@Peak Reflow Temperature-Max (s) :

NOT SPECIFIED

Number of Elements :

1

RoHS Status :

RoHS Compliant

Length :

1.6mm

Collector Base Voltage (VCBO) :

-30V

Terminal Form :

Flat

Packaging :

Tape and Reel (TR)

Moisture Sensitivity Level (MSL) :

1 (Unlimited)

Mount :

Surface Mount

Number of Terminations :

3

Max Operating Temperature :

150°C

Transistor Application :

AMPLIFIER

Transistor Element Material :

SILICON

hFE Min :

70

HTS Code :

8541.21.00.75

ECCN Code :

EAR99

Continuous Collector Current :

-30mA

Transition Frequency :

300MHz