DMTH10H017LPD-13

Manufacturer :

Diodes Incorporated

Product Category :

Transistors - FETs, MOSFETs - Arrays

Product Category :

MOSFET

Product Type :

MOSFET

Input Capacitance (Ciss) (Max) @ Vds :

1986pF @ 50V

Technology :

Si

Drain to Source Voltage (Vdss) :

100V

Qualification :

-

Transistor Polarity :

N Channel

Series :

-

Product Status :

Active

Maximum Operating Temperature :

+ 175 C

Rds On (Max) @ Id, Vgs :

17.4mOhm @ 17A, 10V

Gate Charge (Qg) (Max) @ Vgs :

28.6nC @ 10V

Operating Temperature :

-55°C ~ 175°C (TJ)

Supplier Device Package :

PowerDI5060-8 (Type E)

Continuous Drain Current Id :

59A

Current - Continuous Drain (Id) @ 25°C :

59A (Tc)

Configuration :

Dual

Packaging :

Cut Tape

Package / Case :

8-PowerTDFN

Subcategory :

MOSFETs

Channel Mode :

Enhancement

Package :

Tape and Reel (TR)

FET Feature :

Standard

Minimum Operating Temperature :

- 55 C

Rise Time :

16.3 ns

Power - Max :

2.6W (Ta), 93W (Tc)

Number of Channels :

2 Channel

Base Product Number :

DMTH10H017

Transistor Type :

2 N-Channel

FET Type :

2 N-Channel (Dual)

Manufacturer :

Diodes Incorporated

Mounting Type :

Surface Mount

Channel Type :

N Channel

Brand :

Diodes Incorporated

Vgs(th) (Max) @ Id :

3V @ 250µA

Mounting Style :

SMD/SMT

MSL :

MSL 1 - Unlimited