DMTH10H005SCT

Manufacturer :

Diodes Incorporated

Product Category :

Transistors - FETs, MOSFETs - Single

Packaging :

Tube

Vgs (Max) :

±20V

JESD-609 Code :

e3

DS Breakdown Voltage-Min :

100V

Time@Peak Reflow Temperature-Max (s) :

NOT SPECIFIED

Number of Terminations :

3

Avalanche Energy Rating (Eas) :

542 mJ

Reach Compliance Code :

not_compliant

Rds On (Max) @ Id, Vgs :

5m Ω @ 13A, 10V

Factory Lead Time :

19 Weeks

Drain Current-Max (Abs) (ID) :

140A

Drain-source On Resistance-Max :

0.005ohm

FET Type :

N-Channel

Transistor Element Material :

SILICON

Gate Charge (Qg) (Max) @ Vgs :

111.7nC @ 10V

JESD-30 Code :

R-PSFM-T3

Power Dissipation-Max :

187W Tc

Configuration :

SINGLE WITH BUILT-IN DIODE

Number of Elements :

1

Mounting Type :

Through Hole

Transistor Application :

SWITCHING

Input Capacitance (Ciss) (Max) @ Vds :

8474pF @ 50V

Operating Temperature :

-55°C~175°C TJ

Pulsed Drain Current-Max (IDM) :

400A

ECCN Code :

EAR99

Vgs(th) (Max) @ Id :

4V @ 250µA

Package / Case :

TO-220-3

RoHS Status :

ROHS3 Compliant

Surface Mount :

No

Current - Continuous Drain (Id) @ 25°C :

140A Tc

JEDEC-95 Code :

TO-220AB

Drive Voltage (Max Rds On,Min Rds On) :

10V

Peak Reflow Temperature (Cel) :

NOT SPECIFIED

Drain to Source Voltage (Vdss) :

100V

Operating Mode :

ENHANCEMENT MODE

Terminal Finish :

Matte Tin (Sn)

Terminal Position :

Single