DMTH10H005SCT

Manufacturer :

Diodes Incorporated

Product Category :

Transistors - FETs, MOSFETs - Single

Peak Reflow Temperature (Cel) :

NOT SPECIFIED

Drive Voltage (Max Rds On,Min Rds On) :

10V

RoHS Status :

ROHS3 Compliant

Vgs(th) (Max) @ Id :

4V @ 250µA

Configuration :

SINGLE WITH BUILT-IN DIODE

Transistor Element Material :

SILICON

JESD-30 Code :

R-PSFM-T3

Reach Compliance Code :

not_compliant

JESD-609 Code :

e3

Input Capacitance (Ciss) (Max) @ Vds :

8474pF @ 50V

Packaging :

Tube

Power Dissipation-Max :

187W Tc

Number of Elements :

1

Operating Mode :

ENHANCEMENT MODE

DS Breakdown Voltage-Min :

100V

Vgs (Max) :

±20V

Drain to Source Voltage (Vdss) :

100V

Drain Current-Max (Abs) (ID) :

140A

ECCN Code :

EAR99

Terminal Finish :

Matte Tin (Sn)

JEDEC-95 Code :

TO-220AB

Transistor Application :

SWITCHING

Mounting Type :

Through Hole

Terminal Position :

Single

FET Type :

N-Channel

Avalanche Energy Rating (Eas) :

542 mJ

Factory Lead Time :

19 Weeks

Rds On (Max) @ Id, Vgs :

5m Ω @ 13A, 10V

Package / Case :

TO-220-3

Gate Charge (Qg) (Max) @ Vgs :

111.7nC @ 10V

Number of Terminations :

3

Current - Continuous Drain (Id) @ 25°C :

140A Tc

Pulsed Drain Current-Max (IDM) :

400A

Drain-source On Resistance-Max :

0.005ohm

Time@Peak Reflow Temperature-Max (s) :

NOT SPECIFIED

Surface Mount :

No

Operating Temperature :

-55°C~175°C TJ