DMP6050SSD-13

Manufacturer :

Diodes Incorporated

Product Category :

Transistors - FETs, MOSFETs - Arrays

Number of Pins :

8

Number of Elements :

2

Packaging :

Tape and Reel (TR)

Vgs(th) (Max) @ Id :

3V @ 250µA

FET Type :

2 P-Channel (Dual)

Transistor Element Material :

SILICON

Terminal Form :

Gull wing

Configuration :

SEPARATE, 2 ELEMENTS WITH BUILT-IN DIODE

ECCN Code :

EAR99

Number of Terminations :

8

Package / Case :

8-SOIC (0.154, 3.90mm Width)

Mounting Type :

Surface Mount

FET Technology :

METAL-OXIDE SEMICONDUCTOR

JESD-609 Code :

e3

Max Power Dissipation :

1.2W

Drain to Source Voltage (Vdss) :

60V

Mount :

Surface Mount

Gate Charge (Qg) (Max) @ Vgs :

24nC @ 10V

Published :

2014

Terminal Finish :

Matte Tin (Sn)

Transistor Application :

SWITCHING

Time@Peak Reflow Temperature-Max (s) :

NOT SPECIFIED

Operating Mode :

ENHANCEMENT MODE

Factory Lead Time :

23 Weeks

Input Capacitance (Ciss) (Max) @ Vds :

1293pF @ 30V

Peak Reflow Temperature (Cel) :

NOT SPECIFIED

Drain-source On Resistance-Max :

0.055Ohm

DS Breakdown Voltage-Min :

60V

Operating Temperature :

-55°C~150°C TJ

RoHS Status :

ROHS3 Compliant

Moisture Sensitivity Level (MSL) :

1 (Unlimited)

Rds On (Max) @ Id, Vgs :

55m Ω @ 5A, 10V

FET Feature :

Standard

Continuous Drain Current (ID) :

4.8A

Power - Max :

1.2W