DMP6023LFG-13

Manufacturer :

Diodes Incorporated

Product Category :

Transistors - FETs, MOSFETs - Single

Terminal Position :

Dual

Current - Continuous Drain (Id) @ 25°C :

7.7A Ta

Rds On (Max) @ Id, Vgs :

25m Ω @ 5A, 10V

Turn-Off Delay Time :

110 ns

Packaging :

Tape and Reel (TR)

Factory Lead Time :

23 Weeks

Power Dissipation-Max :

1W Ta

Published :

2012

Gate to Source Voltage (Vgs) :

20V

Input Capacitance (Ciss) (Max) @ Vds :

2569pF @ 30V

Operating Mode :

ENHANCEMENT MODE

Number of Elements :

1

Moisture Sensitivity Level (MSL) :

1 (Unlimited)

Vgs (Max) :

±20V

JESD-609 Code :

e3

Package / Case :

8-PowerVDFN

Number of Pins :

8

RoHS Status :

ROHS3 Compliant

ECCN Code :

EAR99

Mounting Type :

Surface Mount

Number of Terminations :

5

JESD-30 Code :

S-PDSO-N5

Mount :

Surface Mount

Additional Feature :

High Reliability

Configuration :

SINGLE WITH BUILT-IN DIODE

FET Type :

P-Channel

Gate Charge (Qg) (Max) @ Vgs :

53.1nC @ 10V

Terminal Form :

NO LEAD

Operating Temperature :

-55°C~150°C TJ

Vgs(th) (Max) @ Id :

3V @ 250µA

Drive Voltage (Max Rds On,Min Rds On) :

4.5V 10V

Transistor Element Material :

SILICON

Drain-source On Resistance-Max :

0.025Ohm

Rise Time :

7.1ns

Continuous Drain Current (ID) :

7.7A

Fall Time (Typ) :

62 ns

Terminal Finish :

Matte Tin (Sn)

Time@Peak Reflow Temperature-Max (s) :

NOT SPECIFIED

Transistor Application :

SWITCHING

Drain to Source Voltage (Vdss) :

60V

Number of Channels :

1

Peak Reflow Temperature (Cel) :

NOT SPECIFIED

Turn On Delay Time :

6 ns

Case Connection :

DRAIN

Drain to Source Breakdown Voltage :

-60V