DMN66D0LW-7

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Mfr.Part #
DMN66D0LW-7
Manufacturer
Diodes Incorporated
Package / Case
SC-70, SOT-323
Datasheet
Download
Description
MOSFET N-CH 60V 115MA SOT323
Stock
171,354
In Stock :
171,354

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Manufacturer :
Diodes Incorporated
Product Category :
Transistors - FETs, MOSFETs - Single
ECCN Code :
EAR99
Package / Case :
SC-70, SOT-323
FET Type :
N-Channel
Element Configuration :
Single
Number of Pins :
3
Mounting Type :
Surface Mount
Pbfree Code :
yes
RoHS Status :
ROHS3 Compliant
Turn On Delay Time :
10 ns
Mount :
Surface Mount
Drive Voltage (Max Rds On,Min Rds On) :
5V 10V
Number of Elements :
1
Length :
2.15mm
Power Dissipation-Max :
200mW Ta
Height :
1mm
Transistor Application :
SWITCHING
Time@Peak Reflow Temperature-Max (s) :
40
REACH SVHC :
No SVHC
Turn-Off Delay Time :
33 ns
Factory Lead Time :
5 Weeks
Vgs (Max) :
±20V
Width :
1.3mm
Terminal Form :
Gull wing
Weight :
6.010099mg
Terminal Position :
Dual
Operating Temperature :
-55°C~150°C TJ
Moisture Sensitivity Level (MSL) :
1 (Unlimited)
Number of Channels :
1
Rds On (Max) @ Id, Vgs :
6 Ω @ 115mA, 5V
JESD-609 Code :
e3
Peak Reflow Temperature (Cel) :
260
Operating Mode :
ENHANCEMENT MODE
Additional Feature :
High Reliability
Packaging :
Tape and Reel (TR)
Input Capacitance (Ciss) (Max) @ Vds :
23pF @ 25V
Terminal Finish :
Matte Tin (Sn)
Current - Continuous Drain (Id) @ 25°C :
115mA Ta
Gate to Source Voltage (Vgs) :
20V
Published :
2008
DS Breakdown Voltage-Min :
60V
Pin Count :
3
Continuous Drain Current (ID) :
115mA
Number of Terminations :
3
Drain to Source Voltage (Vdss) :
60V
Vgs(th) (Max) @ Id :
2V @ 250μA
Drain-source On Resistance-Max :
6Ohm
Radiation Hardening :
No
Transistor Element Material :
SILICON
Datasheets
DMN66D0LW-7
Introducing Transistors - FETs, MOSFETs - Single Diodes Incorporated DMN66D0LW-7 from Chip IC,where excellence meets affordability. This product stands out with its Package / Case:SC-70, SOT-323, Number of Pins:3, Mounting Type:Surface Mount, Operating Temperature:-55°C~150°C TJ, Number of Channels:1, Number of Terminations:3, DMN66D0LW-7 pinout, DMN66D0LW-7 datasheet PDF, DMN66D0LW-7 amp .Beyond Transistors - FETs, MOSFETs - Single Diodes Incorporated DMN66D0LW-7 ,we also offer EPC2019, EPC2053, EPC2015C, Our vast inventory has you covered. Contact us now for immediate solutions.

Diodes Incorporated DMN66D0LW-7


N-Channel Tape & Reel (TR) 6 Ω @ 115mA, 5V ±20V 23pF @ 25V 60V SC-70, SOT-323

DMN66D0LW-7 Overview


As an op amp's input capacitance parameter, CI, is defined as the capacitance between the input terminals when one input is grounded, this device's maximum input capacitance is 23pF @ 25V.This device conducts a continuous drain current (ID) of 115mA, which is the maximum continuous current transistor can conduct.When the device is turned off, a turn-off delay time of 33 ns occurs as the input capacitance charges before drain current conduction commences.Before drain current conduction can begin, the device's turning-on delay time takes time to charge its input capacitance. This delay time is 10 ns.Voltage at the gate-source terminal of a FET transistor, called the gate-source voltage, or VGS, can be 20V.A normal operation of the DS requires keeping the breakdown voltage above 60V.This transistor requires a drain-source voltage (Vdss) of 60V.In order to reduce power consumption, this device uses a drive voltage of 5V 10V volts (5V 10V).

DMN66D0LW-7 Features


a continuous drain current (ID) of 115mA
the turn-off delay time is 33 ns
a 60V drain to source voltage (Vdss)


DMN66D0LW-7 Applications


There are a lot of Diodes Incorporated
DMN66D0LW-7 applications of single MOSFETs transistors.


  • Motor drives and Uninterruptible Power Supplies
  • Micro Solar Inverter
  • DC/DC converters
  • Power Tools
  • Motor Drives and Uninterruptible Power Supples
  • Synchronous Rectification
  • Battery Protection Circuit
  • Telecom 1 Sever Power Supplies
  • Industrial Power Supplies
  • PFC stages, hard switching PWM stages and resonant switching
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