DMN65D8LFB-7

Manufacturer :

Diodes Incorporated

Product Category :

Transistors - FETs, MOSFETs - Single

ECCN Code :

EAR99

RoHS Status :

ROHS3 Compliant

Moisture Sensitivity Level (MSL) :

1 (Unlimited)

Power Dissipation-Max :

430mW Ta

Transistor Application :

SWITCHING

Peak Reflow Temperature (Cel) :

260

Terminal Form :

NO LEAD

Pin Count :

3

Additional Feature :

High Reliability

Time@Peak Reflow Temperature-Max (s) :

40

DS Breakdown Voltage-Min :

60V

Vgs(th) (Max) @ Id :

2V @ 250μA

FET Type :

N-Channel

Drain to Source Voltage (Vdss) :

60V

Input Capacitance (Ciss) (Max) @ Vds :

25pF @ 25V

Drive Voltage (Max Rds On,Min Rds On) :

5V 10V

Number of Terminations :

3

Operating Mode :

ENHANCEMENT MODE

Vgs (Max) :

±20V

Package / Case :

3-UFDFN

JESD-30 Code :

R-PBCC-N3

Case Connection :

DRAIN

Terminal Position :

BOTTOM

Published :

2015

Mounting Type :

Surface Mount

Drain-source On Resistance-Max :

4Ohm

Factory Lead Time :

23 Weeks

Pbfree Code :

yes

Current - Continuous Drain (Id) @ 25°C :

260mA Ta

Number of Elements :

1

Rds On (Max) @ Id, Vgs :

3 Ω @ 115mA, 10V

Transistor Element Material :

SILICON

Surface Mount :

yes

Packaging :

Tape and Reel (TR)

Operating Temperature :

-55°C~150°C TJ

Drain Current-Max (Abs) (ID) :

0.4A

JESD-609 Code :

e4

Terminal Finish :

Nickel/Palladium/Gold (Ni/Pd/Au)

Configuration :

SINGLE WITH BUILT-IN DIODE