DMN62D1SFB-7B

Manufacturer :

Diodes Incorporated

Product Category :

Transistors - FETs, MOSFETs - Single

Factory Lead Time :

16 Weeks

Current - Continuous Drain (Id) @ 25°C :

410mA Ta

Additional Feature :

High Reliability

RoHS Status :

ROHS3 Compliant

Mounting Type :

Surface Mount

Operating Mode :

ENHANCEMENT MODE

Number of Elements :

1

ECCN Code :

EAR99

Time@Peak Reflow Temperature-Max (s) :

40

Power Dissipation :

470mW

Number of Terminations :

3

Power Dissipation-Max :

470mW Ta

Transistor Element Material :

SILICON

Vgs (Max) :

±20V

Peak Reflow Temperature (Cel) :

260

Drain to Source Voltage (Vdss) :

60V

Fall Time (Typ) :

11.96 ns

Case Connection :

DRAIN

REACH SVHC :

No SVHC

Pin Count :

3

Published :

2014

Gate Charge (Qg) (Max) @ Vgs :

2.8nC @ 10V

Continuous Drain Current (ID) :

410mA

Vgs(th) (Max) @ Id :

2.3V @ 250μA

Pbfree Code :

yes

Transistor Application :

SWITCHING

Turn On Delay Time :

3.89 ns

Number of Pins :

3

Package / Case :

3-UFDFN

Rds On (Max) @ Id, Vgs :

1.4 Ω @ 40mA, 10V

Configuration :

SINGLE WITH BUILT-IN DIODE

Terminal Position :

BOTTOM

Number of Channels :

1

DS Breakdown Voltage-Min :

60V

Turn-Off Delay Time :

18.8 ns

Packaging :

Tape and Reel (TR)

Terminal Finish :

Nickel/Palladium/Gold (Ni/Pd/Au)

Drive Voltage (Max Rds On,Min Rds On) :

4.5V 10V

Input Capacitance (Ciss) (Max) @ Vds :

80pF @ 40V

Mount :

Surface Mount

JESD-609 Code :

e4

Gate to Source Voltage (Vgs) :

20V

FET Type :

N-Channel

Operating Temperature :

-55°C~150°C TJ

Moisture Sensitivity Level (MSL) :

1 (Unlimited)

Rise Time :

4.93ns

Radiation Hardening :

No