DMN62D0SFD-7

Manufacturer :

Diodes Incorporated

Product Category :

Transistors - FETs, MOSFETs - Single

Moisture Sensitivity Level (MSL) :

1 (Unlimited)

Input Capacitance (Ciss) (Max) @ Vds :

30.2pF @ 25V

Package / Case :

3-UDFN

Fall Time (Typ) :

9.04 ns

Drain-source On Resistance-Max :

0.002Ohm

Turn-Off Delay Time :

16 ns

Transistor Application :

SWITCHING

ECCN Code :

EAR99

Gate Charge (Qg) (Max) @ Vgs :

0.87nC @ 10V

Turn On Delay Time :

3.95 ns

Power Dissipation-Max :

430mW Ta

Rise Time :

3.81ns

Number of Elements :

1

Drain Current-Max (Abs) (ID) :

0.54A

Drain to Source Breakdown Voltage :

60V

Number of Pins :

3

Transistor Element Material :

SILICON

Published :

2012

Number of Channels :

1

JESD-609 Code :

e4

Gate to Source Voltage (Vgs) :

20V

Element Configuration :

Single

Vgs(th) (Max) @ Id :

2.5V @ 1mA

REACH SVHC :

No SVHC

Time@Peak Reflow Temperature-Max (s) :

40

RoHS Status :

ROHS3 Compliant

Pbfree Code :

yes

Mounting Type :

Surface Mount

Terminal Position :

Dual

Additional Feature :

HIGH RELIABILITY, LOW THRESHOLD

Rds On (Max) @ Id, Vgs :

2 Ω @ 500mA, 10V

Terminal Finish :

Nickel/Palladium/Gold (Ni/Pd/Au)

Vgs (Max) :

±20V

Operating Temperature :

-55°C~150°C TJ

Number of Terminations :

3

FET Type :

N-Channel

Packaging :

Tape and Reel (TR)

Current - Continuous Drain (Id) @ 25°C :

540mA Ta

Operating Mode :

ENHANCEMENT MODE

Mount :

Surface Mount

Pin Count :

3

Continuous Drain Current (ID) :

540mA

Peak Reflow Temperature (Cel) :

260

Radiation Hardening :

No

Drive Voltage (Max Rds On,Min Rds On) :

5V 10V

Factory Lead Time :

14 Weeks