DMN62D0LFD-7

Manufacturer :

Diodes Incorporated

Product Category :

Transistors - FETs, MOSFETs - Single

Fall Time (Typ) :

8.7 ns

Drain to Source Voltage (Vdss) :

60V

Terminal Finish :

Nickel/Palladium/Gold (Ni/Pd/Au)

Turn-Off Delay Time :

18 ns

Element Configuration :

Single

Package / Case :

3-UDFN

Continuous Drain Current (ID) :

310mA

Moisture Sensitivity Level (MSL) :

1 (Unlimited)

Packaging :

Tape and Reel (TR)

RoHS Status :

ROHS3 Compliant

Power Dissipation-Max :

480mW Ta

FET Type :

N-Channel

Vgs (Max) :

±20V

Current - Continuous Drain (Id) @ 25°C :

310mA Ta

Operating Temperature :

-55°C~150°C TJ

Peak Reflow Temperature (Cel) :

260

Mounting Type :

Surface Mount

Drive Voltage (Max Rds On,Min Rds On) :

1.8V 4V

Radiation Hardening :

No

Time@Peak Reflow Temperature-Max (s) :

30

Height :

480μm

Length :

1.25mm

Rise Time :

2.1ns

Gate Charge (Qg) (Max) @ Vgs :

500nC @ 4.5V

Width :

1.25mm

JESD-609 Code :

e4

Vgs(th) (Max) @ Id :

1V @ 250μA

Published :

2014

Rds On (Max) @ Id, Vgs :

2 Ω @ 100mA, 4V

Mount :

Surface Mount

ECCN Code :

EAR99

Number of Pins :

3

Gate to Source Voltage (Vgs) :

20V

Input Capacitance (Ciss) (Max) @ Vds :

31pF @ 25V

Turn On Delay Time :

2.6 ns