DMN61D8LQ-13

Manufacturer :

Diodes Incorporated

Product Category :

Transistors - FETs, MOSFETs - Single

Terminal Form :

Gull wing

RoHS Status :

ROHS3 Compliant

Additional Feature :

High Reliability

Peak Reflow Temperature (Cel) :

NOT SPECIFIED

Reference Standard :

AEC-Q101

ECCN Code :

EAR99

Transistor Element Material :

SILICON

Terminal Position :

Dual

Packaging :

Tape and Reel (TR)

Number of Elements :

1

Drain-source On Resistance-Max :

2.4Ohm

Drain Current-Max (Abs) (ID) :

0.47A

Operating Temperature :

-55°C~150°C TJ

Rds On (Max) @ Id, Vgs :

1.8 Ω @ 150mA, 5V

Operating Mode :

ENHANCEMENT MODE

Drain to Source Voltage (Vdss) :

60V

DS Breakdown Voltage-Min :

60V

Drive Voltage (Max Rds On,Min Rds On) :

3V 5V

Number of Terminations :

3

Gate Charge (Qg) (Max) @ Vgs :

0.74nC @ 5V

Mount :

Surface Mount

Published :

2015

JESD-609 Code :

e3

Terminal Finish :

Matte Tin (Sn)

Time@Peak Reflow Temperature-Max (s) :

NOT SPECIFIED

Vgs (Max) :

±12V

Transistor Application :

SWITCHING

Mounting Type :

Surface Mount

Vgs(th) (Max) @ Id :

2V @ 1mA

Current - Continuous Drain (Id) @ 25°C :

470mA Ta

Moisture Sensitivity Level (MSL) :

1 (Unlimited)

Factory Lead Time :

17 Weeks

Continuous Drain Current (ID) :

470mA

JESD-30 Code :

R-PDSO-G3

Configuration :

SINGLE WITH BUILT-IN DIODE AND RESISTOR

Power Dissipation-Max :

390mW Ta

Package / Case :

TO-236-3, SC-59, SOT-23-3

Input Capacitance (Ciss) (Max) @ Vds :

12.9pF @ 12V

FET Type :

N-Channel