DMN60H080DS-7

Manufacturer :

Diodes Incorporated

Product Category :

Transistors - FETs, MOSFETs - Single

Power Dissipation :

700mW

Published :

2017

JESD-30 Code :

R-PDSO-G3

Operating Temperature :

-55°C~150°C TJ

Time@Peak Reflow Temperature-Max (s) :

30

Drain Current-Max (Abs) (ID) :

0.07A

Max Junction Temperature (Tj) :

150°C

Gate to Source Voltage (Vgs) :

20V

Power Dissipation-Max :

1.1W Ta

Surface Mount :

yes

Turn-Off Delay Time :

21 ns

ECCN Code :

EAR99

Packaging :

Tape and Reel (TR)

Terminal Position :

Dual

RoHS Status :

ROHS3 Compliant

Configuration :

SINGLE WITH BUILT-IN DIODE

Mounting Type :

Surface Mount

JESD-609 Code :

e3

Number of Terminations :

3

Transistor Application :

SWITCHING

Drain-source On Resistance-Max :

290Ohm

Gate Charge (Qg) (Max) @ Vgs :

1.7nC @ 10V

Input Capacitance (Ciss) (Max) @ Vds :

25pF @ 25V

Transistor Element Material :

SILICON

Factory Lead Time :

21 Weeks

Operating Mode :

ENHANCEMENT MODE

Vgs(th) (Max) @ Id :

3V @ 250µA

FET Type :

N-Channel

Peak Reflow Temperature (Cel) :

260

Drain to Source Breakdown Voltage :

600V

Drive Voltage (Max Rds On,Min Rds On) :

4.5V 10V

Turn On Delay Time :

7 ns

Terminal Form :

Gull wing

Rds On (Max) @ Id, Vgs :

100 Ω @ 60mA, 10V

Vgs (Max) :

±20V

Number of Channels :

1

Terminal Finish :

Matte Tin (Sn)

Height :

1.1mm

Package / Case :

TO-236-3, SC-59, SOT-23-3

Continuous Drain Current (ID) :

70mA

Current - Continuous Drain (Id) @ 25°C :

80mA Ta

Moisture Sensitivity Level (MSL) :

1 (Unlimited)

Number of Elements :

1