DMN6069SE-13

Manufacturer :

Diodes Incorporated

Product Category :

Transistors - FETs, MOSFETs - Single

Series :

Automotive, AEC-Q101

Power Dissipation-Max :

2.2W Ta

Drain to Source Voltage (Vdss) :

60V

Vgs (Max) :

±20V

Time@Peak Reflow Temperature-Max (s) :

30

Operating Mode :

ENHANCEMENT MODE

Mounting Type :

Surface Mount

JESD-609 Code :

e3

Operating Temperature :

-55°C~150°C TJ

Vgs(th) (Max) @ Id :

3V @ 250µA

Drive Voltage (Max Rds On,Min Rds On) :

4.5V 10V

Drain-source On Resistance-Max :

0.069Ohm

Factory Lead Time :

22 Weeks

Gate Charge (Qg) (Max) @ Vgs :

16nC @ 10V

Packaging :

Tape and Reel (TR)

Case Connection :

DRAIN

Additional Feature :

High Reliability

FET Type :

N-Channel

Number of Elements :

1

Input Capacitance (Ciss) (Max) @ Vds :

825pF @ 30V

Pulsed Drain Current-Max (IDM) :

25A

Transistor Application :

SWITCHING

Drain Current-Max (Abs) (ID) :

4.3A

Transistor Element Material :

SILICON

Published :

2014

Moisture Sensitivity Level (MSL) :

1 (Unlimited)

Terminal Form :

Gull wing

Current - Continuous Drain (Id) @ 25°C :

4.3A Ta 10A Tc

Configuration :

SINGLE WITH BUILT-IN DIODE

Peak Reflow Temperature (Cel) :

260

Terminal Finish :

Matte Tin (Sn)

Terminal Position :

Dual

Surface Mount :

yes

Rds On (Max) @ Id, Vgs :

69m Ω @ 3A, 10V

JESD-30 Code :

R-PDSO-G4

DS Breakdown Voltage-Min :

60V

ECCN Code :

EAR99

Package / Case :

TO-261-4, TO-261AA

Number of Terminations :

4

RoHS Status :

ROHS3 Compliant