DMN5L06V-7

Manufacturer :

Diodes Incorporated

Product Category :

Transistors - FETs, MOSFETs - Arrays

FET Type :

2 N-Channel (Dual)

Radiation Hardening :

No

Height :

600μm

Drain to Source Voltage (Vdss) :

50V

ECCN Code :

EAR99

Width :

1.2mm

Time@Peak Reflow Temperature-Max (s) :

40

FET Technology :

METAL-OXIDE SEMICONDUCTOR

Operating Temperature :

-55°C~150°C TJ

Drain-source On Resistance-Max :

3Ohm

Mount :

Surface Mount

Published :

2007

Additional Feature :

LOW CAPACITANCE

Gate to Source Voltage (Vgs) :

20V

FET Feature :

Logic Level Gate

Input Capacitance (Ciss) (Max) @ Vds :

50pF @ 25V

Peak Reflow Temperature (Cel) :

260

Number of Pins :

6

Number of Channels :

2

Packaging :

Tape and Reel (TR)

JESD-609 Code :

e3

Terminal Form :

Flat

Length :

1.6mm

Transistor Element Material :

SILICON

Package / Case :

SOT-563, SOT-666

Element Configuration :

Dual

Drain to Source Breakdown Voltage :

50V

Continuous Drain Current (ID) :

280mA

Transistor Application :

SWITCHING

Moisture Sensitivity Level (MSL) :

1 (Unlimited)

Terminal Finish :

Matte Tin (Sn)

Feedback Cap-Max (Crss) :

5 pF

Number of Elements :

2

RoHS Status :

RoHS Compliant

Mounting Type :

Surface Mount

Operating Mode :

ENHANCEMENT MODE

Weight :

3.005049mg

Rds On (Max) @ Id, Vgs :

3 Ω @ 200mA, 2.7V

Pin Count :

6

Number of Terminations :

6

Max Power Dissipation :

150mW

Vgs(th) (Max) @ Id :

1.2V @ 250µA