DMN53D0L-7

Manufacturer :

Diodes Incorporated

Product Category :

Transistors - FETs, MOSFETs - Single

Rise Time :

2.5ns

Input Capacitance (Ciss) (Max) @ Vds :

46pF @ 25V

Current - Continuous Drain (Id) @ 25°C :

500mA Ta

Power Dissipation-Max :

370mW Ta

JESD-609 Code :

e3

Moisture Sensitivity Level (MSL) :

1 (Unlimited)

Factory Lead Time :

22 Weeks

Turn-Off Delay Time :

19 ns

Number of Channels :

1

Terminal Finish :

Matte Tin (Sn)

Drive Voltage (Max Rds On,Min Rds On) :

2.5V 10V

RoHS Status :

ROHS3 Compliant

Peak Reflow Temperature (Cel) :

260

Continuous Drain Current (ID) :

500mA

Fall Time (Typ) :

11 ns

Packaging :

Tape and Reel (TR)

Rds On (Max) @ Id, Vgs :

1.6 Ω @ 500mA, 10V

Mount :

Surface Mount

Gate Charge (Qg) (Max) @ Vgs :

0.6nC @ 4.5V

FET Type :

N-Channel

Mounting Type :

Surface Mount

ECCN Code :

EAR99

Published :

2014

Gate to Source Voltage (Vgs) :

20V

Vgs (Max) :

±20V

Capacitance :

46pF

Package / Case :

TO-236-3, SC-59, SOT-23-3

Turn On Delay Time :

2.7 ns

Weight :

7.994566mg

Vgs(th) (Max) @ Id :

1.5V @ 250µA

Time@Peak Reflow Temperature-Max (s) :

30

Operating Temperature :

-55°C~150°C TJ

Element Configuration :

Single

Drain to Source Breakdown Voltage :

50V