DMG8822UTS-13

Manufacturer :

Diodes Incorporated

Product Category :

Transistors - FETs, MOSFETs - Arrays

Lead Free :

Lead Free

Max Power Dissipation :

870mW

REACH SVHC :

No SVHC

Additional Feature :

High Reliability

Gate Charge (Qg) (Max) @ Vgs :

9.6nC @ 4.5V

Vgs(th) (Max) @ Id :

900mV @ 250μA

Moisture Sensitivity Level (MSL) :

1 (Unlimited)

Number of Channels :

2

Factory Lead Time :

20 Weeks

JESD-609 Code :

e3

Operating Mode :

ENHANCEMENT MODE

FET Technology :

METAL-OXIDE SEMICONDUCTOR

Transistor Element Material :

SILICON

FET Feature :

Standard

Pbfree Code :

yes

Operating Temperature :

-55°C~150°C TJ

RoHS Status :

ROHS3 Compliant

Number of Elements :

2

Package / Case :

8-TSSOP (0.173, 4.40mm Width)

Series :

Automotive, AEC-Q101

Current - Continuous Drain (Id) @ 25°C :

4.9A Ta

Number of Terminations :

8

Gate to Source Voltage (Vgs) :

8V

Number of Pins :

8

Packaging :

Tape and Reel (TR)

Published :

2009

Terminal Form :

Gull wing

FET Type :

2 N-Channel (Dual) Common Drain

Drain to Source Breakdown Voltage :

20V

Turn On Delay Time :

7.8 ns

Terminal Finish :

Matte Tin (Sn)

Time@Peak Reflow Temperature-Max (s) :

40

Pin Count :

8

Fall Time (Typ) :

10.1 ns

Turn-Off Delay Time :

38.6 ns

Continuous Drain Current (ID) :

4.9A

Transistor Application :

SWITCHING

Mount :

Surface Mount

Peak Reflow Temperature (Cel) :

260

Rise Time :

21.1ns

Rds On (Max) @ Id, Vgs :

25m Ω @ 8.2A, 4.5V

Input Capacitance (Ciss) (Max) @ Vds :

841pF @ 10V

ECCN Code :

EAR99

Radiation Hardening :

No

Mounting Type :

Surface Mount