DMG8601UFG-7

Manufacturer :

Diodes Incorporated

Product Category :

Transistors - FETs, MOSFETs - Arrays

Transistor Application :

SWITCHING

Turn-Off Delay Time :

562 ns

Pbfree Code :

yes

Input Capacitance (Ciss) (Max) @ Vds :

143pF @ 10V

Vgs(th) (Max) @ Id :

1.05V @ 250μA

Factory Lead Time :

16 Weeks

Lead Free :

Lead Free

Qualification Status :

Not Qualified

Rise Time :

78ns

Number of Elements :

2

Gate Charge (Qg) (Max) @ Vgs :

8.8nC @ 4.5V

Operating Mode :

ENHANCEMENT MODE

Terminal Form :

NO LEAD

Number of Terminations :

5

Number of Channels :

2

Gate to Source Voltage (Vgs) :

12V

Contact Plating :

Gold

Max Power Dissipation :

920mW

FET Type :

2 N-Channel (Dual) Common Drain

FET Technology :

METAL-OXIDE SEMICONDUCTOR

Rds On (Max) @ Id, Vgs :

23m Ω @ 6.5A, 4.5V

REACH SVHC :

No SVHC

Mount :

Surface Mount

Number of Pins :

8

FET Feature :

Logic Level Gate

Peak Reflow Temperature (Cel) :

260

Transistor Element Material :

SILICON

JESD-30 Code :

R-PDSO-N5

Pin Count :

8

Packaging :

Cut Tape (CT)

Operating Temperature :

-55°C~150°C TJ

Base Part Number :

DMG8601UFG

Package / Case :

8-PowerUDFN

Continuous Drain Current (ID) :

6.1A

Drain to Source Voltage (Vdss) :

20V

Moisture Sensitivity Level (MSL) :

1 (Unlimited)

Turn On Delay Time :

53 ns

JESD-609 Code :

e4

RoHS Status :

ROHS3 Compliant

ECCN Code :

EAR99

Additional Feature :

High Reliability

Time@Peak Reflow Temperature-Max (s) :

40

Published :

2011

Fall Time (Typ) :

234 ns

Mounting Type :

Surface Mount