DMG4N65CTI

Manufacturer :

Diodes Incorporated

Product Category :

Transistors - FETs, MOSFETs - Single

Terminal Finish :

Matte Tin (Sn)

Pulsed Drain Current-Max (IDM) :

6A

Operating Mode :

ENHANCEMENT MODE

REACH SVHC :

No SVHC

Current - Continuous Drain (Id) @ 25°C :

4A Tc

Mounting Type :

Through Hole

Rds On (Max) @ Id, Vgs :

3 Ω @ 2A, 10V

Moisture Sensitivity Level (MSL) :

1 (Unlimited)

Packaging :

Tube

Package / Case :

TO-220-3 Full Pack, Isolated Tab

Drain to Source Breakdown Voltage :

650V

Avalanche Energy Rating (Eas) :

456 mJ

Transistor Application :

SWITCHING

Additional Feature :

High Reliability

Gate to Source Voltage (Vgs) :

30V

Turn-Off Delay Time :

40 ns

Configuration :

SINGLE WITH BUILT-IN DIODE

Gate Charge (Qg) (Max) @ Vgs :

13.5nC @ 10V

Factory Lead Time :

8 Weeks

Drain Current-Max (Abs) (ID) :

4A

Radiation Hardening :

No

Terminal Position :

Single

Published :

2012

Weight :

2.299997g

JEDEC-95 Code :

TO-220AB

Power Dissipation-Max :

8.35W Ta

Vgs(th) (Max) @ Id :

5V @ 250μA

JESD-609 Code :

e3

Operating Temperature :

-55°C~150°C TJ

Rise Time :

13.8ns

Mount :

Through Hole

Fall Time (Typ) :

16 ns

Transistor Element Material :

SILICON

Number of Pins :

3

Drive Voltage (Max Rds On,Min Rds On) :

10V

Input Capacitance (Ciss) (Max) @ Vds :

900pF @ 25V

Number of Terminations :

3

Pin Count :

3

RoHS Status :

ROHS3 Compliant

Continuous Drain Current (ID) :

4A

Vgs (Max) :

±30V

Number of Channels :

1

FET Type :

N-Channel

Number of Elements :

1

Turn On Delay Time :

15.1 ns

Drain-source On Resistance-Max :

3Ohm