DMG4N65CT

Manufacturer :

Diodes Incorporated

Product Category :

Transistors - FETs, MOSFETs - Single

Transistor Element Material :

SILICON

Peak Reflow Temperature (Cel) :

260

Transistor Application :

SWITCHING

DS Breakdown Voltage-Min :

650V

Input Capacitance (Ciss) (Max) @ Vds :

900pF @ 25V

Pulsed Drain Current-Max (IDM) :

6A

Current - Continuous Drain (Id) @ 25°C :

4A Tc

Packaging :

Tube

Number of Elements :

1

Number of Channels :

1

Turn-Off Delay Time :

40 ns

Rise Time :

13.8ns

JESD-609 Code :

e3

Terminal Finish :

Matte Tin (Sn)

Rds On (Max) @ Id, Vgs :

3 Ω @ 2A, 10V

Drain-source On Resistance-Max :

3Ohm

Operating Temperature :

-55°C~150°C TJ

Avalanche Energy Rating (Eas) :

456 mJ

Package / Case :

TO-220-3

JEDEC-95 Code :

TO-220AB

Time@Peak Reflow Temperature-Max (s) :

40

Element Configuration :

Single

Turn On Delay Time :

15.1 ns

Moisture Sensitivity Level (MSL) :

1 (Unlimited)

Mounting Type :

Through Hole

Number of Pins :

3

Additional Feature :

High Reliability

RoHS Status :

ROHS3 Compliant

Vgs (Max) :

±30V

Drive Voltage (Max Rds On,Min Rds On) :

10V

Height :

16.5mm

Drain to Source Voltage (Vdss) :

650V

Pbfree Code :

No

Published :

2012

Mount :

Through Hole

Width :

4.85mm

Gate to Source Voltage (Vgs) :

30V

Fall Time (Typ) :

16 ns

Continuous Drain Current (ID) :

4A

Radiation Hardening :

No

Drain Current-Max (Abs) (ID) :

4A

Number of Terminations :

3

Vgs(th) (Max) @ Id :

5V @ 250μA

Weight :

2.299997g

FET Type :

N-Channel

REACH SVHC :

No SVHC

Length :

10.7mm

Gate Charge (Qg) (Max) @ Vgs :

13.5nC @ 10V

Power Dissipation-Max :

2.19W Ta

Operating Mode :

ENHANCEMENT MODE