DME375A

Manufacturer :

Microsemi

Product Category :

Transistors - Bipolar (BJT) - RF

JESD-609 Code :

e0

Emitter Base Voltage (VEBO) :

4V

Collector Emitter Breakdown Voltage :

55V

Published :

1997

Frequency :

1.15GHz

ECCN Code :

EAR99

Moisture Sensitivity Level (MSL) :

1 (Unlimited)

Packaging :

Bulk

Terminal Form :

Flat

Collector Emitter Voltage (VCEO) :

55V

Transistor Application :

AMPLIFIER

RoHS Status :

RoHS Compliant

Max Power Dissipation :

875W

Max Collector Current :

30A

Terminal Position :

Dual

Mounting Type :

Chassis Mount

Terminal Finish :

TIN LEAD

Transistor Element Material :

SILICON

Package / Case :

55AW

Mount :

Chassis Mount, Screw

JESD-30 Code :

R-CDFM-F2

Configuration :

Single

Power Dissipation :

875W

Pin Count :

2

Lead Free :

Lead Free

Pbfree Code :

No

DC Current Gain (hFE) (Min) @ Ic, Vce :

10 @ 300mA 5V

Operating Temperature :

200°C TJ

Polarity/Channel Type :

NPN

Number of Terminations :

2

Radiation Hardening :

No

Number of Elements :

1

Number of Pins :

3

Gain :

6.5dB

Transistor Type :

NPN

Factory Lead Time :

22 Weeks

Output Power :

375W

Frequency - Transition :

1.025GHz~1.15GHz