DME375A

Manufacturer :

Microsemi

Product Category :

Transistors - Bipolar (BJT) - RF

Emitter Base Voltage (VEBO) :

4V

Package / Case :

55AW

ECCN Code :

EAR99

Frequency :

1.15GHz

Lead Free :

Lead Free

Mounting Type :

Chassis Mount

Pbfree Code :

No

Configuration :

Single

Power Dissipation :

875W

Pin Count :

2

Transistor Element Material :

SILICON

JESD-30 Code :

R-CDFM-F2

Collector Emitter Breakdown Voltage :

55V

Terminal Form :

Flat

Output Power :

375W

Number of Terminations :

2

Terminal Finish :

TIN LEAD

DC Current Gain (hFE) (Min) @ Ic, Vce :

10 @ 300mA 5V

RoHS Status :

RoHS Compliant

Moisture Sensitivity Level (MSL) :

1 (Unlimited)

Max Collector Current :

30A

Transistor Type :

NPN

Gain :

6.5dB

Published :

1997

Factory Lead Time :

22 Weeks

Transistor Application :

AMPLIFIER

Terminal Position :

Dual

Number of Elements :

1

Collector Emitter Voltage (VCEO) :

55V

Frequency - Transition :

1.025GHz~1.15GHz

Operating Temperature :

200°C TJ

Number of Pins :

3

Radiation Hardening :

No

Mount :

Chassis Mount, Screw

Packaging :

Bulk

Polarity/Channel Type :

NPN

Max Power Dissipation :

875W

JESD-609 Code :

e0