DMC3036LSD-13

Manufacturer :

Diodes Incorporated

Product Category :

Transistors - FETs, MOSFETs - Arrays

Gate to Source Voltage (Vgs) :

20V

Operating Temperature :

-55°C~150°C TJ

Polarity/Channel Type :

N-CHANNEL AND P-CHANNEL

Additional Feature :

High Reliability

Time@Peak Reflow Temperature-Max (s) :

40

Vgs(th) (Max) @ Id :

2.1V @ 250μA

Width :

4.1mm

Number of Channels :

2

Package / Case :

8-SOIC (0.154, 3.90mm Width)

Rds On (Max) @ Id, Vgs :

36m Ω @ 6.9A, 10V

Input Capacitance (Ciss) (Max) @ Vds :

431pF @ 15V

Max Power Dissipation :

1.5W

Height :

1.5mm

Mounting Type :

Surface Mount

Moisture Sensitivity Level (MSL) :

1 (Unlimited)

Current - Continuous Drain (Id) @ 25°C :

5A 4.5A

FET Type :

N and P-Channel

Transistor Element Material :

SILICON

ECCN Code :

EAR99

Drain Current-Max (Abs) (ID) :

6.9A

Gate Charge (Qg) (Max) @ Vgs :

7.9nC @ 10V

Pbfree Code :

yes

Terminal Finish :

Matte Tin (Sn)

Drain-source On Resistance-Max :

0.036Ohm

Radiation Hardening :

No

Weight :

73.992255mg

Terminal Position :

Dual

Transistor Application :

SWITCHING

FET Feature :

Logic Level Gate

RoHS Status :

ROHS3 Compliant

Length :

5.3mm

FET Technology :

METAL-OXIDE SEMICONDUCTOR

Published :

2011

Mount :

Surface Mount

Number of Pins :

8

Number of Elements :

2

Packaging :

Tape and Reel (TR)

Operating Mode :

ENHANCEMENT MODE

Continuous Drain Current (ID) :

4.5A

JESD-609 Code :

e3

Peak Reflow Temperature (Cel) :

260

Drain to Source Breakdown Voltage :

30V

Number of Terminations :

8

Terminal Form :

Gull wing

Pin Count :

8