DMC3018LSD-13

Manufacturer :

Diodes Incorporated

Product Category :

Transistors - FETs, MOSFETs - Arrays

Gate Charge (Qg) (Max) @ Vgs :

12.4nC @ 10V

Gate to Source Voltage (Vgs) :

20V

Package / Case :

8-SOIC (0.154, 3.90mm Width)

Weight :

850.995985mg

Number of Elements :

2

Number of Pins :

8

Terminal Position :

Dual

Factory Lead Time :

21 Weeks

Continuous Drain Current (ID) :

6A

Input Capacitance (Ciss) (Max) @ Vds :

631pF @ 15V

Additional Feature :

High Reliability

DS Breakdown Voltage-Min :

30V

JESD-609 Code :

e3

Height :

1.5mm

REACH SVHC :

No SVHC

FET Technology :

METAL-OXIDE SEMICONDUCTOR

Mount :

Surface Mount

Operating Temperature :

-55°C~150°C TJ

Transistor Element Material :

SILICON

Moisture Sensitivity Level (MSL) :

1 (Unlimited)

Pin Count :

8

Drain to Source Voltage (Vdss) :

30V

Power Dissipation :

2.5W

Max Power Dissipation :

2.5W

Time@Peak Reflow Temperature-Max (s) :

40

Terminal Finish :

Matte Tin (Sn)

Operating Mode :

ENHANCEMENT MODE

Packaging :

Tape and Reel (TR)

FET Type :

N and P-Channel

Width :

4.1mm

Vgs(th) (Max) @ Id :

2.1V @ 250μA

Length :

5.3mm

Terminal Form :

Gull wing

RoHS Status :

ROHS3 Compliant

Polarity/Channel Type :

N-CHANNEL AND P-CHANNEL

Drain Current-Max (Abs) (ID) :

9.1A

Peak Reflow Temperature (Cel) :

260

Radiation Hardening :

No

Published :

2011

Pbfree Code :

yes

Rds On (Max) @ Id, Vgs :

20m Ω @ 6.9A, 10V

Transistor Application :

SWITCHING

Current - Continuous Drain (Id) @ 25°C :

9.1A 6A

FET Feature :

Logic Level Gate

Mounting Type :

Surface Mount

Number of Terminations :

8

ECCN Code :

EAR99