DMC3032LSD-13

Manufacturer :

Diodes Incorporated

Product Category :

Transistors - FETs, MOSFETs - Arrays

Number of Elements :

2

Operating Temperature :

-55°C~150°C TJ

Time@Peak Reflow Temperature-Max (s) :

40

REACH SVHC :

No SVHC

Terminal Position :

Dual

Turn-Off Delay Time :

50.1 ns

Rise Time :

6.5ns

Weight :

73.992255mg

RoHS Status :

ROHS3 Compliant

Gate to Source Voltage (Vgs) :

20V

Rds On (Max) @ Id, Vgs :

32m Ω @ 7A, 10V

Published :

2010

Operating Mode :

ENHANCEMENT MODE

Input Capacitance (Ciss) (Max) @ Vds :

404.5pF @ 15V

FET Type :

N and P-Channel

Mounting Type :

Surface Mount

ECCN Code :

EAR99

Radiation Hardening :

No

Terminal Finish :

Matte Tin (Sn)

Vgs(th) (Max) @ Id :

2.1V @ 250μA

Additional Feature :

High Reliability

Max Power Dissipation :

2.5W

Continuous Drain Current (ID) :

7A

Turn On Delay Time :

10.1 ns

Package / Case :

8-SOIC (0.154, 3.90mm Width)

Drain to Source Breakdown Voltage :

-30V

Packaging :

Tape and Reel (TR)

Moisture Sensitivity Level (MSL) :

1 (Unlimited)

Fall Time (Typ) :

22.2 ns

Mount :

Surface Mount

Pbfree Code :

yes

Number of Channels :

2

Factory Lead Time :

15 Weeks

Number of Pins :

8

Polarity/Channel Type :

N-CHANNEL AND P-CHANNEL

Drain to Source Voltage (Vdss) :

30V

Number of Terminations :

8

Terminal Form :

Gull wing

Transistor Application :

SWITCHING

Gate Charge (Qg) (Max) @ Vgs :

9.2nC @ 10V

Transistor Element Material :

SILICON

Peak Reflow Temperature (Cel) :

260

FET Technology :

METAL-OXIDE SEMICONDUCTOR

FET Feature :

Logic Level Gate

Pin Count :

8

JESD-609 Code :

e3

Current - Continuous Drain (Id) @ 25°C :

8.1A 7A