D44H8

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Mfr.Part #
D44H8
Manufacturer
onsemi
Package / Case
TO-220-3
Datasheet
Download
Description
TRANS NPN 60V 10A TO220
Stock
12,962
In Stock :
12,962

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Manufacturer :
onsemi
Product Category :
Transistors - Bipolar (BJT) - Single
Transistor Application :
SWITCHING
Package / Case :
TO-220-3
Weight :
9.071847g
Width :
4.6mm
Transition Frequency :
50MHz
JESD-609 Code :
e3
Number of Pins :
3
Vce Saturation (Max) @ Ib, Ic :
1V @ 400mA, 8A
Radiation Hardening :
No
DC Current Gain (hFE) (Min) @ Ic, Vce :
40 @ 4A 1V
Current - Collector Cutoff (Max) :
10μA
Mounting Type :
Through Hole
Packaging :
Tube
Collector Base Voltage (VCBO) :
60V
Collector Emitter Saturation Voltage :
1V
JEDEC-95 Code :
TO-220AB
Number of Elements :
1
Transistor Type :
NPN
Base Part Number :
D44H8
ECCN Code :
EAR99
RoHS Status :
ROHS3 Compliant
Element Configuration :
Single
REACH SVHC :
No SVHC
Transistor Element Material :
SILICON
Max Power Dissipation :
50W
Power Dissipation :
50W
Pin Count :
3
Collector Emitter Voltage (VCEO) :
60V
Factory Lead Time :
8 Weeks
Moisture Sensitivity Level (MSL) :
1 (Unlimited)
Emitter Base Voltage (VEBO) :
5V
Current Rating :
10A
Voltage - Rated DC :
60V
Mount :
Through Hole
Operating Temperature :
150°C TJ
Length :
10.4mm
Contact Plating :
Tin
Height :
9.15mm
Collector Emitter Breakdown Voltage :
60V
hFE Min :
60
Case Connection :
COLLECTOR
Max Collector Current :
10A
Number of Terminations :
3
Polarity/Channel Type :
NPN
VCEsat-Max :
1 V
Lead Free :
Lead Free
Introducing Transistors - Bipolar (BJT) - Single onsemi D44H8 from Chip IC,where excellence meets affordability. This product stands out with its Package / Case:TO-220-3, Number of Pins:3, Mounting Type:Through Hole, Base Part Number:D44H8, Operating Temperature:150°C TJ, Number of Terminations:3, D44H8 pinout, D44H8 datasheet PDF, D44H8 amp .Beyond Transistors - Bipolar (BJT) - Single onsemi D44H8 ,we also offer BC817-40,235, BC817-40,215, BC807-40,215, Our vast inventory has you covered. Contact us now for immediate solutions.

onsemi D44H8


NPN 150°C TJ 10μA 1 Elements 3 Terminations SILICON NPN TO-220-3 Tube Through Hole

D44H8 Overview


This device has a DC current gain of 40 @ 4A 1V, which is the ratio between the base current and the collector current.This design offers maximum flexibility with a collector emitter saturation voltage of 1V.A VCE saturation (Max) of 1V @ 400mA, 8A means Ic has reached its maximum value(saturated).A high level of efficiency can be achieved if the base voltage of the emitter remains at 5V.This device has a current rating of 10A which corresponds to the maximum current it can carry for an indefinite period without deteriorating too much.As you can see, the part has a transition frequency of 50MHz.A maximum collector current of 10A volts is possible.

D44H8 Features


the DC current gain for this device is 40 @ 4A 1V
a collector emitter saturation voltage of 1V
the vce saturation(Max) is 1V @ 400mA, 8A
the emitter base voltage is kept at 5V
the current rating of this device is 10A
a transition frequency of 50MHz


D44H8 Applications


There are a lot of STMicroelectronics
D44H8 applications of single BJT transistors.


  • Inverter
  • Interface
  • Driver
  • Muting
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