D44H11FP

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Mfr.Part #
D44H11FP
Manufacturer
STMicroelectronics
Package / Case
TO-220-3 Full Pack
Datasheet
Download
Description
TRANS NPN 80V 10A TO220FP
Stock
13,363
In Stock :
13,363

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Manufacturer :
STMicroelectronics
Product Category :
Transistors - Bipolar (BJT) - Single
Polarity/Channel Type :
NPN
Collector Emitter Breakdown Voltage :
80V
RoHS Status :
ROHS3 Compliant
DC Current Gain (hFE) (Min) @ Ic, Vce :
40 @ 4A 1V
Package / Case :
TO-220-3 Full Pack
Mount :
Through Hole
Emitter Base Voltage (VEBO) :
5V
Configuration :
Single
JESD-609 Code :
e3
Pin Count :
3
ECCN Code :
EAR99
Number of Pins :
3
Terminal Position :
Single
Mounting Type :
Through Hole
Transistor Application :
SWITCHING
Radiation Hardening :
No
Case Connection :
Isolated
Base Part Number :
D44H11
JEDEC-95 Code :
TO-220AB
Transistor Type :
NPN
Current - Collector Cutoff (Max) :
10μA
Power Dissipation :
36W
Terminal Finish :
Matte Tin (Sn) - annealed
Packaging :
Tube
Pbfree Code :
yes
Max Power Dissipation :
36W
Collector Emitter Voltage (VCEO) :
1V
Transistor Element Material :
SILICON
Moisture Sensitivity Level (MSL) :
1 (Unlimited)
Max Collector Current :
10A
Number of Terminations :
3
Number of Elements :
1
Operating Temperature :
150°C TJ
Vce Saturation (Max) @ Ib, Ic :
1V @ 400mA, 8A
Lead Free :
Lead Free
Datasheets
D44H11FP
Introducing Transistors - Bipolar (BJT) - Single STMicroelectronics D44H11FP from Chip IC,where excellence meets affordability. This product stands out with its Package / Case:TO-220-3 Full Pack, Number of Pins:3, Mounting Type:Through Hole, Base Part Number:D44H11, Number of Terminations:3, Operating Temperature:150°C TJ, D44H11FP pinout, D44H11FP datasheet PDF, D44H11FP amp .Beyond Transistors - Bipolar (BJT) - Single STMicroelectronics D44H11FP ,we also offer BC817-40,235, BC817-40,215, BC807-40,215, Our vast inventory has you covered. Contact us now for immediate solutions.

STMicroelectronics D44H11FP


NPN 150°C TJ 10μA 1 Elements 3 Terminations SILICON NPN TO-220-3 Full Pack Tube Through Hole

D44H11FP Overview


The DC current gain is the ratio of the base current to the collector current βdc = Ic/Ib and the DC current gain for this device is 40 @ 4A 1V.Vce saturation means Ic is at its maximum value(saturated), and the vce saturation(Max) is 1V @ 400mA, 8A.If the emitter base voltage is kept at 5V, a high level of efficiency can be achieved.Collector current can be as low as 10A volts at its maximum.

D44H11FP Features


the DC current gain for this device is 40 @ 4A 1V
the vce saturation(Max) is 1V @ 400mA, 8A
the emitter base voltage is kept at 5V


D44H11FP Applications


There are a lot of STMicroelectronics
D44H11FP applications of single BJT transistors.


  • Inverter
  • Interface
  • Driver
  • Muting
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