D44H8G

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Mfr.Part #
D44H8G
Manufacturer
onsemi
Package / Case
TO-220-3
Datasheet
Download
Description
TRANS NPN 60V 10A TO220
Stock
8,424
In Stock :
8,424

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Manufacturer :
onsemi
Product Category :
Transistors - Bipolar (BJT) - Single
Transistor Element Material :
SILICON
Additional Feature :
LEADFORM OPTIONS ARE AVAILABLE
Voltage - Rated DC :
60V
Pbfree Code :
yes
Collector Base Voltage (VCBO) :
60V
Peak Reflow Temperature (Cel) :
260
Collector Emitter Voltage (VCEO) :
60V
Emitter Base Voltage (VEBO) :
5V
Transition Frequency :
50MHz
Base Part Number :
D44H
Width :
4.826mm
Length :
10.2616mm
Number of Pins :
3
Collector Emitter Saturation Voltage :
1V
DC Current Gain (hFE) (Min) @ Ic, Vce :
40 @ 4A 1V
Moisture Sensitivity Level (MSL) :
1 (Unlimited)
Lifecycle Status :
ACTIVE (Last Updated: 1 day ago)
Time@Peak Reflow Temperature-Max (s) :
40
Collector Emitter Breakdown Voltage :
60V
Case Connection :
COLLECTOR
JEDEC-95 Code :
TO-220AB
Transistor Type :
NPN
Pin Count :
3
Radiation Hardening :
No
Operating Temperature :
-55°C~150°C TJ
JESD-609 Code :
e3
hFE Min :
40
Contact Plating :
Tin
Frequency :
50MHz
Weight :
4.535924g
Max Power Dissipation :
2W
Transistor Application :
SWITCHING
Packaging :
Tube
Number of Terminations :
3
Max Collector Current :
10A
RoHS Status :
ROHS3 Compliant
Lead Free :
Lead Free
Number of Elements :
1
Polarity/Channel Type :
NPN
Factory Lead Time :
8 Weeks
Package / Case :
TO-220-3
Gain Bandwidth Product :
50MHz
Current Rating :
10A
Published :
2004
Height :
19.85mm
Current - Collector Cutoff (Max) :
10μA
ECCN Code :
EAR99
REACH SVHC :
No SVHC
Mounting Type :
Through Hole
Vce Saturation (Max) @ Ib, Ic :
1V @ 400mA, 8A
Max Junction Temperature (Tj) :
150°C
Element Configuration :
Single
Power Dissipation :
2W
Surface Mount :
No
Datasheets
D44H8G
Introducing Transistors - Bipolar (BJT) - Single onsemi D44H8G from Chip IC,where excellence meets affordability. This product stands out with its Base Part Number:D44H, Number of Pins:3, Operating Temperature:-55°C~150°C TJ, Number of Terminations:3, Package / Case:TO-220-3, Mounting Type:Through Hole, D44H8G pinout, D44H8G datasheet PDF, D44H8G amp .Beyond Transistors - Bipolar (BJT) - Single onsemi D44H8G ,we also offer BC817-40,235, BC817-40,215, BC807-40,215, Our vast inventory has you covered. Contact us now for immediate solutions.

onsemi D44H8G


NPN -55°C~150°C TJ 10μA 1 Elements 3 Terminations SILICON NPN TO-220-3 Tube Through Hole

D44H8G Overview


As dc = Ic/Ib, DC current gain is the ratio of base current to collector current, and DC current gain for this device is 40 @ 4A 1V.The collector emitter saturation voltage is 1V, which allows for maximum design flexibility.When VCE saturation is 1V @ 400mA, 8A, transistor means Ic has reached transistors maximum value (saturated).Emitter base voltages of 5V can achieve high levels of efficiency.Fuse current ratings refer to how much current the fuse can carry for an indefinite period without deteriorating too much, and this device has a current rating of 10A.In the part, the transition frequency is 50MHz.A maximum collector current of 10A volts can be achieved.

D44H8G Features


the DC current gain for this device is 40 @ 4A 1V
a collector emitter saturation voltage of 1V
the vce saturation(Max) is 1V @ 400mA, 8A
the emitter base voltage is kept at 5V
the current rating of this device is 10A
a transition frequency of 50MHz


D44H8G Applications


There are a lot of ON Semiconductor
D44H8G applications of single BJT transistors.


  • Inverter
  • Interface
  • Driver
  • Muting
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