D44H8G

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Mfr.Part #
D44H8G
Manufacturer
onsemi
Package / Case
TO-220-3
Datasheet
Download
Description
TRANS NPN 60V 10A TO220
Stock
8,424
In Stock :
8,424

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Manufacturer :
onsemi
Product Category :
Transistors - Bipolar (BJT) - Single
Number of Elements :
1
hFE Min :
40
RoHS Status :
ROHS3 Compliant
Element Configuration :
Single
Transistor Application :
SWITCHING
Max Power Dissipation :
2W
Polarity/Channel Type :
NPN
Number of Pins :
3
Lead Free :
Lead Free
Surface Mount :
No
Length :
10.2616mm
Peak Reflow Temperature (Cel) :
260
Collector Emitter Saturation Voltage :
1V
Mounting Type :
Through Hole
Max Collector Current :
10A
Contact Plating :
Tin
Current - Collector Cutoff (Max) :
10μA
Package / Case :
TO-220-3
REACH SVHC :
No SVHC
Base Part Number :
D44H
Max Junction Temperature (Tj) :
150°C
Gain Bandwidth Product :
50MHz
Transition Frequency :
50MHz
Vce Saturation (Max) @ Ib, Ic :
1V @ 400mA, 8A
Height :
19.85mm
Number of Terminations :
3
Pbfree Code :
yes
Lifecycle Status :
ACTIVE (Last Updated: 1 day ago)
Weight :
4.535924g
Current Rating :
10A
Transistor Type :
NPN
Frequency :
50MHz
Pin Count :
3
Voltage - Rated DC :
60V
ECCN Code :
EAR99
Time@Peak Reflow Temperature-Max (s) :
40
Published :
2004
Radiation Hardening :
No
Packaging :
Tube
Case Connection :
COLLECTOR
Moisture Sensitivity Level (MSL) :
1 (Unlimited)
Transistor Element Material :
SILICON
Power Dissipation :
2W
Additional Feature :
LEADFORM OPTIONS ARE AVAILABLE
Operating Temperature :
-55°C~150°C TJ
Collector Emitter Voltage (VCEO) :
60V
Emitter Base Voltage (VEBO) :
5V
JEDEC-95 Code :
TO-220AB
Collector Emitter Breakdown Voltage :
60V
JESD-609 Code :
e3
DC Current Gain (hFE) (Min) @ Ic, Vce :
40 @ 4A 1V
Width :
4.826mm
Collector Base Voltage (VCBO) :
60V
Factory Lead Time :
8 Weeks
Introducing Transistors - Bipolar (BJT) - Single onsemi D44H8G from Chip IC,where excellence meets affordability. This product stands out with its Number of Pins:3, Mounting Type:Through Hole, Package / Case:TO-220-3, Base Part Number:D44H, Number of Terminations:3, Operating Temperature:-55°C~150°C TJ, D44H8G pinout, D44H8G datasheet PDF, D44H8G amp .Beyond Transistors - Bipolar (BJT) - Single onsemi D44H8G ,we also offer BC817-40,235, BC817-40,215, BC807-40,215, Our vast inventory has you covered. Contact us now for immediate solutions.

onsemi D44H8G


NPN -55°C~150°C TJ 10μA 1 Elements 3 Terminations SILICON NPN TO-220-3 Tube Through Hole

D44H8G Overview


As dc = Ic/Ib, DC current gain is the ratio of base current to collector current, and DC current gain for this device is 40 @ 4A 1V.The collector emitter saturation voltage is 1V, which allows for maximum design flexibility.When VCE saturation is 1V @ 400mA, 8A, transistor means Ic has reached transistors maximum value (saturated).Emitter base voltages of 5V can achieve high levels of efficiency.Fuse current ratings refer to how much current the fuse can carry for an indefinite period without deteriorating too much, and this device has a current rating of 10A.In the part, the transition frequency is 50MHz.A maximum collector current of 10A volts can be achieved.

D44H8G Features


the DC current gain for this device is 40 @ 4A 1V
a collector emitter saturation voltage of 1V
the vce saturation(Max) is 1V @ 400mA, 8A
the emitter base voltage is kept at 5V
the current rating of this device is 10A
a transition frequency of 50MHz


D44H8G Applications


There are a lot of ON Semiconductor
D44H8G applications of single BJT transistors.


  • Inverter
  • Interface
  • Driver
  • Muting
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