D44H11G

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Mfr.Part #
D44H11G
Manufacturer
onsemi
Package / Case
TO-220-3
Datasheet
Download
Description
TRANS NPN 80V 10A TO220
Stock
14,683
In Stock :
14,683

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Manufacturer :
onsemi
Product Category :
Transistors - Bipolar (BJT) - Single
Collector Base Voltage (VCBO) :
80V
Time@Peak Reflow Temperature-Max (s) :
40
Transistor Element Material :
SILICON
Package / Case :
TO-220-3
Lead Free :
Lead Free
Power Dissipation :
2W
Base Part Number :
D44H
DC Current Gain (hFE) (Min) @ Ic, Vce :
40 @ 4A 1V
Packaging :
Tube
Element Configuration :
Single
Height :
9.28mm
Radiation Hardening :
No
Frequency :
50MHz
Max Collector Current :
10A
Collector Emitter Saturation Voltage :
1V
Lifecycle Status :
ACTIVE (Last Updated: 4 days ago)
Length :
10.28mm
Operating Temperature :
-55°C~150°C TJ
Weight :
4.535924g
Additional Feature :
LEADFORM OPTIONS ARE AVAILABLE
Max Power Dissipation :
2W
Peak Reflow Temperature (Cel) :
260
Collector Emitter Breakdown Voltage :
80V
Vce Saturation (Max) @ Ib, Ic :
1V @ 400mA, 8A
Transistor Application :
SWITCHING
Pin Count :
3
Width :
4.82mm
Polarity/Channel Type :
NPN
ECCN Code :
EAR99
RoHS Status :
ROHS3 Compliant
Gain Bandwidth Product :
50MHz
Transistor Type :
NPN
Pbfree Code :
yes
Factory Lead Time :
7 Weeks
Emitter Base Voltage (VEBO) :
5V
Number of Elements :
1
Contact Plating :
Tin
Mounting Type :
Through Hole
Moisture Sensitivity Level (MSL) :
1 (Unlimited)
Voltage - Rated DC :
80V
Collector Emitter Voltage (VCEO) :
80V
Number of Pins :
3
Transition Frequency :
50MHz
Case Connection :
COLLECTOR
REACH SVHC :
No SVHC
Published :
2005
JEDEC-95 Code :
TO-220AB
Current Rating :
10A
Current - Collector Cutoff (Max) :
10μA
hFE Min :
60
Surface Mount :
No
Number of Terminations :
3
JESD-609 Code :
e3
Introducing Transistors - Bipolar (BJT) - Single onsemi D44H11G from Chip IC,where excellence meets affordability. This product stands out with its Package / Case:TO-220-3, Base Part Number:D44H, Operating Temperature:-55°C~150°C TJ, Mounting Type:Through Hole, Number of Pins:3, Number of Terminations:3, D44H11G pinout, D44H11G datasheet PDF, D44H11G amp .Beyond Transistors - Bipolar (BJT) - Single onsemi D44H11G ,we also offer BC817-40,235, BC817-40,215, BC807-40,215, Our vast inventory has you covered. Contact us now for immediate solutions.

onsemi D44H11G


NPN -55°C~150°C TJ 10μA 1 Elements 3 Terminations SILICON NPN TO-220-3 Tube Through Hole

D44H11G Overview


As dc = Ic/Ib, DC current gain is the ratio of base current to collector current, and DC current gain for this device is 40 @ 4A 1V.The collector emitter saturation voltage is 1V, which allows for maximum design flexibility.When VCE saturation is 1V @ 400mA, 8A, transistor means Ic has reached transistors maximum value (saturated).Emitter base voltages of 5V can achieve high levels of efficiency.Fuse current ratings refer to how much current the fuse can carry for an indefinite period without deteriorating too much, and this device has a current rating of 10A.In the part, the transition frequency is 50MHz.A maximum collector current of 10A volts can be achieved.

D44H11G Features


the DC current gain for this device is 40 @ 4A 1V
a collector emitter saturation voltage of 1V
the vce saturation(Max) is 1V @ 400mA, 8A
the emitter base voltage is kept at 5V
the current rating of this device is 10A
a transition frequency of 50MHz


D44H11G Applications


There are a lot of ON Semiconductor
D44H11G applications of single BJT transistors.


  • Inverter
  • Interface
  • Driver
  • Muting
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