D44H11G

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Mfr.Part #
D44H11G
Manufacturer
onsemi
Package / Case
TO-220-3
Datasheet
Download
Description
TRANS NPN 80V 10A TO220
Stock
14,683
In Stock :
14,683

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Manufacturer :
onsemi
Product Category :
Transistors - Bipolar (BJT) - Single
Mounting Type :
Through Hole
Emitter Base Voltage (VEBO) :
5V
hFE Min :
60
Voltage - Rated DC :
80V
Contact Plating :
Tin
Length :
10.28mm
Moisture Sensitivity Level (MSL) :
1 (Unlimited)
Number of Terminations :
3
Packaging :
Tube
Lifecycle Status :
ACTIVE (Last Updated: 4 days ago)
Operating Temperature :
-55°C~150°C TJ
Polarity/Channel Type :
NPN
Time@Peak Reflow Temperature-Max (s) :
40
Vce Saturation (Max) @ Ib, Ic :
1V @ 400mA, 8A
Transistor Type :
NPN
Power Dissipation :
2W
Surface Mount :
No
RoHS Status :
ROHS3 Compliant
Number of Elements :
1
Radiation Hardening :
No
Pbfree Code :
yes
Current Rating :
10A
Transition Frequency :
50MHz
Case Connection :
COLLECTOR
Base Part Number :
D44H
Published :
2005
Gain Bandwidth Product :
50MHz
Collector Emitter Breakdown Voltage :
80V
JESD-609 Code :
e3
Current - Collector Cutoff (Max) :
10μA
Factory Lead Time :
7 Weeks
Collector Emitter Voltage (VCEO) :
80V
Transistor Application :
SWITCHING
Frequency :
50MHz
Element Configuration :
Single
Package / Case :
TO-220-3
Transistor Element Material :
SILICON
REACH SVHC :
No SVHC
Width :
4.82mm
Peak Reflow Temperature (Cel) :
260
Additional Feature :
LEADFORM OPTIONS ARE AVAILABLE
Pin Count :
3
Max Collector Current :
10A
ECCN Code :
EAR99
Collector Base Voltage (VCBO) :
80V
Lead Free :
Lead Free
Height :
9.28mm
Number of Pins :
3
Weight :
4.535924g
DC Current Gain (hFE) (Min) @ Ic, Vce :
40 @ 4A 1V
Collector Emitter Saturation Voltage :
1V
Max Power Dissipation :
2W
JEDEC-95 Code :
TO-220AB
Datasheets
D44H11G
Introducing Transistors - Bipolar (BJT) - Single onsemi D44H11G from Chip IC,where excellence meets affordability. This product stands out with its Mounting Type:Through Hole, Number of Terminations:3, Operating Temperature:-55°C~150°C TJ, Base Part Number:D44H, Package / Case:TO-220-3, Number of Pins:3, D44H11G pinout, D44H11G datasheet PDF, D44H11G amp .Beyond Transistors - Bipolar (BJT) - Single onsemi D44H11G ,we also offer BC817-40,235, BC817-40,215, BC807-40,215, Our vast inventory has you covered. Contact us now for immediate solutions.

onsemi D44H11G


NPN -55°C~150°C TJ 10μA 1 Elements 3 Terminations SILICON NPN TO-220-3 Tube Through Hole

D44H11G Overview


As dc = Ic/Ib, DC current gain is the ratio of base current to collector current, and DC current gain for this device is 40 @ 4A 1V.The collector emitter saturation voltage is 1V, which allows for maximum design flexibility.When VCE saturation is 1V @ 400mA, 8A, transistor means Ic has reached transistors maximum value (saturated).Emitter base voltages of 5V can achieve high levels of efficiency.Fuse current ratings refer to how much current the fuse can carry for an indefinite period without deteriorating too much, and this device has a current rating of 10A.In the part, the transition frequency is 50MHz.A maximum collector current of 10A volts can be achieved.

D44H11G Features


the DC current gain for this device is 40 @ 4A 1V
a collector emitter saturation voltage of 1V
the vce saturation(Max) is 1V @ 400mA, 8A
the emitter base voltage is kept at 5V
the current rating of this device is 10A
a transition frequency of 50MHz


D44H11G Applications


There are a lot of ON Semiconductor
D44H11G applications of single BJT transistors.


  • Inverter
  • Interface
  • Driver
  • Muting
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