CSD75208W1015T

Manufacturer :

Texas Instruments

Product Category :

Transistors - FETs, MOSFETs - Arrays

Vgs(th) (Max) @ Id :

1.1V @ 250μA

Drain to Source Voltage (Vdss) :

20V

REACH SVHC :

No SVHC

Feedback Cap-Max (Crss) :

10 pF

Gate to Source Voltage (Vgs) :

-6V

Operating Temperature :

-55°C~150°C TJ

Number of Terminations :

6

Element Configuration :

Dual

Gate Charge (Qg) (Max) @ Vgs :

2.5nC @ 4.5V

Series :

NexFET™

FET Feature :

Logic Level Gate

Peak Reflow Temperature (Cel) :

260

Transistor Application :

SWITCHING

Rds On (Max) @ Id, Vgs :

68m Ω @ 1A, 4.5V

Turn-Off Delay Time :

29 ns

Rise Time :

5ns

Threshold Voltage :

-800mV

Lifecycle Status :

ACTIVE (Last Updated: 1 week ago)

Terminal Finish :

Tin/Silver/Copper (Sn/Ag/Cu)

Number of Channels :

2

Number of Pins :

6

Package / Case :

6-UFBGA, DSBGA

RoHS Status :

ROHS3 Compliant

Fall Time (Typ) :

11 ns

Turn On Delay Time :

9 ns

Mount :

Surface Mount

Input Capacitance (Ciss) (Max) @ Vds :

410pF @ 10V

JESD-609 Code :

e1

Weight :

1.700971mg

FET Type :

2 P-Channel (Dual) Common Source

Operating Mode :

ENHANCEMENT MODE

Moisture Sensitivity Level (MSL) :

1 (Unlimited)

Pbfree Code :

yes

Time@Peak Reflow Temperature-Max (s) :

NOT SPECIFIED

Continuous Drain Current (ID) :

1.6A

Terminal Form :

Ball

Drain-source On Resistance-Max :

0.15Ohm

Drain to Source Breakdown Voltage :

-20V

Terminal Position :

BOTTOM

Transistor Element Material :

SILICON

Max Power Dissipation :

750mW

Packaging :

Tape and Reel (TR)

Factory Lead Time :

6 Weeks

FET Technology :

METAL-OXIDE SEMICONDUCTOR

Width :

1.8mm

Height :

1mm

Thickness :

2mm

Number of Elements :

2

Length :

1.5mm

Lead Free :

Lead Free

Base Part Number :

CSD75207

Mounting Type :

Surface Mount