CSD75205W1015

Manufacturer :

Texas Instruments

Product Category :

Transistors - FETs, MOSFETs - Arrays

Gate to Source Voltage (Vgs) :

-6V

Threshold Voltage :

-650mV

Drain-source On Resistance-Max :

0.18ohm

FET Technology :

METAL-OXIDE SEMICONDUCTOR

Transistor Element Material :

SILICON

REACH SVHC :

No SVHC

Rise Time :

5.3ns

Terminal Form :

Ball

Vgs(th) (Max) @ Id :

850mV @ 250μA

Pin Count :

6

Operating Temperature :

-55°C~150°C TJ

RoHS Status :

ROHS3 Compliant

Base Part Number :

CSD75205

Turn-Off Delay Time :

32 ns

Turn On Delay Time :

6.3 ns

Operating Mode :

ENHANCEMENT MODE

Number of Elements :

2

Element Configuration :

Dual

Max Power Dissipation :

750mW

Mount :

Surface Mount

Series :

NexFET™

Qualification Status :

Not Qualified

Lead Free :

Contains Lead

Number of Terminations :

6

Gate Charge (Qg) (Max) @ Vgs :

2.2nC @ 4.5V

Package / Case :

6-UFBGA, DSBGA

Moisture Sensitivity Level (MSL) :

1 (Unlimited)

ECCN Code :

EAR99

Peak Reflow Temperature (Cel) :

NOT SPECIFIED

Number of Pins :

6

Terminal Position :

BOTTOM

Power Dissipation :

750mW

Input Capacitance (Ciss) (Max) @ Vds :

265pF @ 10V

Continuous Drain Current (ID) :

1.2A

Feedback Cap-Max (Crss) :

33 pF

Pbfree Code :

No

Packaging :

Tape and Reel (TR)

Transistor Application :

SWITCHING

Rds On (Max) @ Id, Vgs :

120m Ω @ 1A, 4.5V

Drain to Source Breakdown Voltage :

-20V

FET Type :

2 P-Channel (Dual)

Mounting Type :

Surface Mount

FET Feature :

Logic Level Gate

Drain to Source Voltage (Vdss) :

20V

Fall Time (Typ) :

17 ns

Time@Peak Reflow Temperature-Max (s) :

NOT SPECIFIED