BUP213

Manufacturer :

Infineon Technologies

Product Category :

Transistors - IGBTs - Single

Power - Max :

200W

Pin Count :

3

Collector Emitter Breakdown Voltage :

1.2kV

Element Configuration :

Single

Vce(on) (Max) @ Vge, Ic :

3.2V @ 15V, 15A

Number of Terminations :

3

Operating Temperature :

-55°C~150°C TJ

Published :

2002

Test Condition :

600V, 15A, 82 Ω, 15V

JESD-609 Code :

e3

Mount :

Through Hole

Max Collector Current :

32A

Number of Pins :

3

Packaging :

Tube

Transistor Application :

Motor Control

Turn On Time :

70 ns

ECCN Code :

EAR99

Number of Elements :

1

Gate-Emitter Thr Voltage-Max :

6.5V

RoHS Status :

Non-RoHS Compliant

Additional Feature :

High Speed

Rise Time :

70ns

Transistor Element Material :

SILICON

Package / Case :

TO-220-3

Gate-Emitter Voltage-Max :

20V

Mounting Type :

Through Hole

Turn Off Time-Nom (toff) :

400 ns

Input Type :

Standard

Time@Peak Reflow Temperature-Max (s) :

NOT SPECIFIED

Voltage - Collector Emitter Breakdown (Max) :

1200V

Max Power Dissipation :

200W

Terminal Finish :

MATTE TIN

Peak Reflow Temperature (Cel) :

NOT SPECIFIED

Current - Collector Pulsed (Icm) :

64A

Polarity/Channel Type :

N-Channel

Td (on/off) @ 25°C :

70ns/400ns

Collector Emitter Voltage (VCEO) :

1.2kV

JEDEC-95 Code :

TO-220AB

Moisture Sensitivity Level (MSL) :

1 (Unlimited)

Qualification Status :

Not Qualified

Fall Time-Max (tf) :

95ns