BUL38D
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- Mfr.Part #
- BUL38D
- Manufacturer
- STMicroelectronics
- Package / Case
- TO-220-3
- Datasheet
- Download
- Description
- TRANS NPN 450V 5A TO220
- Stock
- 2,209
- In Stock ：
- 2,209
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- Manufacturer :
- STMicroelectronics
- Product Category :
- Transistors - Bipolar (BJT) - Single
- Lead Free :
- Lead Free
- Collector Emitter Saturation Voltage :
- 1.1V
- Current - Collector Cutoff (Max) :
- 250μA
- Max Collector Current :
- 5A
- Power Dissipation :
- 80W
- DC Current Gain (hFE) (Min) @ Ic, Vce :
- 10 @ 10mA 5V
- Transistor Element Material :
- SILICON
- Pin Count :
- 3
- ECCN Code :
- EAR99
- Length :
- 10.4mm
- Packaging :
- Tube
- Factory Lead Time :
- 8 Weeks
- Height :
- 15.75mm
- Max Power Dissipation :
- 80W
- Transistor Type :
- NPN
- Weight :
- 4.535924g
- Transistor Application :
- SWITCHING
- hFE Min :
- 10
- Mount :
- Through Hole
- Number of Elements :
- 1
- Operating Temperature :
- 150°C TJ
- Voltage - Rated DC :
- 450V
- Base Part Number :
- BUL38
- Number of Terminations :
- 3
- Element Configuration :
- Single
- Width :
- 4.6mm
- JESD-609 Code :
- e3
- Collector Emitter Breakdown Voltage :
- 450V
- Number of Pins :
- 3
- Contact Plating :
- Tin
- Collector Base Voltage (VCBO) :
- 800V
- Moisture Sensitivity Level (MSL) :
- 1 (Unlimited)
- Package / Case :
- TO-220-3
- RoHS Status :
- ROHS3 Compliant
- Radiation Hardening :
- No
- Emitter Base Voltage (VEBO) :
- 9V
- Collector Emitter Voltage (VCEO) :
- 450V
- Current Rating :
- 10A
- Mounting Type :
- Through Hole
- Polarity/Channel Type :
- NPN
- REACH SVHC :
- No SVHC
- JEDEC-95 Code :
- TO-220AB
- Vce Saturation (Max) @ Ib, Ic :
- 1.1V @ 750mA, 3A
- Datasheets
- BUL38D
BUL38D Documents
NPN 150°C TJ 250μA 1 Elements 3 Terminations SILICON NPN TO-220-3 Tube Through Hole
BUL38D Overview
As the DC current gain is the ratio of the collector current to the base current, for this device the DC current gain is 10 @ 10mA 5V.Single BJT transistor has a collector emSingle BJT transistorter saturation voltage of 1.1V, which allows maximum flexibilSingle BJT transistory in design.As a result of vce saturation, Ic reaches its maximum value (saturated), and vce saturation(Max) is 1.1V @ 750mA, 3A.Single BJT transistor is possible to achieve a high level of efficiency by maintaining the emSingle BJT transistorter base voltage at 9V.Its current rating is 10A, which means that it can sustain a maximum current for an indefinite period of time without degrading too much.During maximum operation, collector current can be as low as 5A volts.
BUL38D Features
the DC current gain for this device is 10 @ 10mA 5V
a collector emitter saturation voltage of 1.1V
the vce saturation(Max) is 1.1V @ 750mA, 3A
the emitter base voltage is kept at 9V
the current rating of this device is 10A
BUL38D Applications
There are a lot of STMicroelectronics
BUL38D applications of single BJT transistors.
- Inverter
- Interface
- Driver
- Muting
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