BUL38D
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- Mfr.Part #
- BUL38D
- Manufacturer
- STMicroelectronics
- Package / Case
- TO-220-3
- Datasheet
- Download
- Description
- TRANS NPN 450V 5A TO220
- Stock
- 2,209
- In Stock ：
- 2,209
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- Manufacturer :
- STMicroelectronics
- Product Category :
- Transistors - Bipolar (BJT) - Single
- Polarity/Channel Type :
- NPN
- Vce Saturation (Max) @ Ib, Ic :
- 1.1V @ 750mA, 3A
- Transistor Application :
- SWITCHING
- Weight :
- 4.535924g
- Collector Base Voltage (VCBO) :
- 800V
- Collector Emitter Voltage (VCEO) :
- 450V
- Height :
- 15.75mm
- DC Current Gain (hFE) (Min) @ Ic, Vce :
- 10 @ 10mA 5V
- Base Part Number :
- BUL38
- Transistor Element Material :
- SILICON
- JESD-609 Code :
- e3
- REACH SVHC :
- No SVHC
- Current - Collector Cutoff (Max) :
- 250μA
- Operating Temperature :
- 150°C TJ
- RoHS Status :
- ROHS3 Compliant
- Package / Case :
- TO-220-3
- Mount :
- Through Hole
- Radiation Hardening :
- No
- Max Collector Current :
- 5A
- Mounting Type :
- Through Hole
- Width :
- 4.6mm
- hFE Min :
- 10
- Voltage - Rated DC :
- 450V
- Number of Terminations :
- 3
- Emitter Base Voltage (VEBO) :
- 9V
- Transistor Type :
- NPN
- Power Dissipation :
- 80W
- Collector Emitter Saturation Voltage :
- 1.1V
- Current Rating :
- 10A
- Moisture Sensitivity Level (MSL) :
- 1 (Unlimited)
- Contact Plating :
- Tin
- Number of Pins :
- 3
- Pin Count :
- 3
- Factory Lead Time :
- 8 Weeks
- Number of Elements :
- 1
- Element Configuration :
- Single
- Packaging :
- Tube
- Max Power Dissipation :
- 80W
- Length :
- 10.4mm
- Collector Emitter Breakdown Voltage :
- 450V
- Lead Free :
- Lead Free
- JEDEC-95 Code :
- TO-220AB
- ECCN Code :
- EAR99
- Datasheets
- BUL38D
BUL38D Documents
NPN 150°C TJ 250μA 1 Elements 3 Terminations SILICON NPN TO-220-3 Tube Through Hole
BUL38D Overview
As the DC current gain is the ratio of the collector current to the base current, for this device the DC current gain is 10 @ 10mA 5V.Single BJT transistor has a collector emSingle BJT transistorter saturation voltage of 1.1V, which allows maximum flexibilSingle BJT transistory in design.As a result of vce saturation, Ic reaches its maximum value (saturated), and vce saturation(Max) is 1.1V @ 750mA, 3A.Single BJT transistor is possible to achieve a high level of efficiency by maintaining the emSingle BJT transistorter base voltage at 9V.Its current rating is 10A, which means that it can sustain a maximum current for an indefinite period of time without degrading too much.During maximum operation, collector current can be as low as 5A volts.
BUL38D Features
the DC current gain for this device is 10 @ 10mA 5V
a collector emitter saturation voltage of 1.1V
the vce saturation(Max) is 1.1V @ 750mA, 3A
the emitter base voltage is kept at 9V
the current rating of this device is 10A
BUL38D Applications
There are a lot of STMicroelectronics
BUL38D applications of single BJT transistors.
- Inverter
- Interface
- Driver
- Muting
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