BUL39D
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- Mfr.Part #
- BUL39D
- Manufacturer
- STMicroelectronics
- Package / Case
- TO-220-3
- Datasheet
- Download
- Description
- TRANS NPN 450V 4A TO220
- Stock
- 3
- In Stock ：
- 3
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- Manufacturer :
- STMicroelectronics
- Product Category :
- Transistors - Bipolar (BJT) - Single
- Width :
- 4.6mm
- Factory Lead Time :
- 8 Weeks
- Moisture Sensitivity Level (MSL) :
- 1 (Unlimited)
- Mount :
- Through Hole
- Vce Saturation (Max) @ Ib, Ic :
- 1.1V @ 500mA, 2.5A
- Length :
- 10.4mm
- hFE Min :
- 4
- Package / Case :
- TO-220-3
- Current Rating :
- 4A
- Voltage - Rated DC :
- 450V
- Max Power Dissipation :
- 70W
- Current - Collector Cutoff (Max) :
- 100μA
- Radiation Hardening :
- No
- Transistor Type :
- NPN
- Max Collector Current :
- 4A
- ECCN Code :
- EAR99
- Collector Emitter Breakdown Voltage :
- 450V
- Mounting Type :
- Through Hole
- Emitter Base Voltage (VEBO) :
- 9V
- Transistor Application :
- SWITCHING
- Lead Free :
- Lead Free
- Collector Emitter Voltage (VCEO) :
- 450V
- Pin Count :
- 3
- Element Configuration :
- Single
- Height :
- 9.15mm
- Number of Elements :
- 1
- Lifecycle Status :
- ACTIVE (Last Updated: 8 months ago)
- Transistor Element Material :
- SILICON
- Number of Terminations :
- 3
- RoHS Status :
- ROHS3 Compliant
- Operating Temperature :
- 150°C TJ
- JESD-609 Code :
- e3
- REACH SVHC :
- No SVHC
- Number of Pins :
- 3
- Base Part Number :
- BUL39
- Collector Base Voltage (VCBO) :
- 850V
- JEDEC-95 Code :
- TO-220AB
- Collector Emitter Saturation Voltage :
- 1.1V
- Power Dissipation :
- 70W
- DC Current Gain (hFE) (Min) @ Ic, Vce :
- 10 @ 10mA 5V
- Contact Plating :
- Tin
- Polarity/Channel Type :
- NPN
- Packaging :
- Tube
- Datasheets
- BUL39D
BUL39D Documents
NPN 150°C TJ 100μA 1 Elements 3 Terminations SILICON NPN TO-220-3 Tube Through Hole
BUL39D Overview
As the DC current gain is the ratio of the collector current to the base current, for this device the DC current gain is 10 @ 10mA 5V.Single BJT transistor has a collector emSingle BJT transistorter saturation voltage of 1.1V, which allows maximum flexibilSingle BJT transistory in design.As a result of vce saturation, Ic reaches its maximum value (saturated), and vce saturation(Max) is 1.1V @ 500mA, 2.5A.Single BJT transistor is possible to achieve a high level of efficiency by maintaining the emSingle BJT transistorter base voltage at 9V.Its current rating is 4A, which means that it can sustain a maximum current for an indefinite period of time without degrading too much.During maximum operation, collector current can be as low as 4A volts.
BUL39D Features
the DC current gain for this device is 10 @ 10mA 5V
a collector emitter saturation voltage of 1.1V
the vce saturation(Max) is 1.1V @ 500mA, 2.5A
the emitter base voltage is kept at 9V
the current rating of this device is 4A
BUL39D Applications
There are a lot of STMicroelectronics
BUL39D applications of single BJT transistors.
- Inverter
- Interface
- Driver
- Muting
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