BUL39D
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- Mfr.Part #
- BUL39D
- Manufacturer
- STMicroelectronics
- Package / Case
- TO-220-3
- Datasheet
- Download
- Description
- TRANS NPN 450V 4A TO220
- Stock
- 3
- In Stock ：
- 3
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- Manufacturer :
- STMicroelectronics
- Product Category :
- Transistors - Bipolar (BJT) - Single
- REACH SVHC :
- No SVHC
- Emitter Base Voltage (VEBO) :
- 9V
- Number of Pins :
- 3
- Factory Lead Time :
- 8 Weeks
- Voltage - Rated DC :
- 450V
- Power Dissipation :
- 70W
- Collector Emitter Breakdown Voltage :
- 450V
- Package / Case :
- TO-220-3
- Max Power Dissipation :
- 70W
- Current - Collector Cutoff (Max) :
- 100μA
- Pin Count :
- 3
- Max Collector Current :
- 4A
- Moisture Sensitivity Level (MSL) :
- 1 (Unlimited)
- Collector Emitter Saturation Voltage :
- 1.1V
- RoHS Status :
- ROHS3 Compliant
- Mounting Type :
- Through Hole
- Number of Terminations :
- 3
- Radiation Hardening :
- No
- Base Part Number :
- BUL39
- Current Rating :
- 4A
- Collector Emitter Voltage (VCEO) :
- 450V
- Width :
- 4.6mm
- Polarity/Channel Type :
- NPN
- Element Configuration :
- Single
- Operating Temperature :
- 150°C TJ
- Number of Elements :
- 1
- Collector Base Voltage (VCBO) :
- 850V
- Transistor Type :
- NPN
- Transistor Element Material :
- SILICON
- ECCN Code :
- EAR99
- Lead Free :
- Lead Free
- Packaging :
- Tube
- Height :
- 9.15mm
- hFE Min :
- 4
- JESD-609 Code :
- e3
- Transistor Application :
- SWITCHING
- Vce Saturation (Max) @ Ib, Ic :
- 1.1V @ 500mA, 2.5A
- Mount :
- Through Hole
- Contact Plating :
- Tin
- DC Current Gain (hFE) (Min) @ Ic, Vce :
- 10 @ 10mA 5V
- Length :
- 10.4mm
- Lifecycle Status :
- ACTIVE (Last Updated: 8 months ago)
- JEDEC-95 Code :
- TO-220AB
- Datasheets
- BUL39D
NPN 150°C TJ 100μA 1 Elements 3 Terminations SILICON NPN TO-220-3 Tube Through Hole
BUL39D Overview
As the DC current gain is the ratio of the collector current to the base current, for this device the DC current gain is 10 @ 10mA 5V.Single BJT transistor has a collector emSingle BJT transistorter saturation voltage of 1.1V, which allows maximum flexibilSingle BJT transistory in design.As a result of vce saturation, Ic reaches its maximum value (saturated), and vce saturation(Max) is 1.1V @ 500mA, 2.5A.Single BJT transistor is possible to achieve a high level of efficiency by maintaining the emSingle BJT transistorter base voltage at 9V.Its current rating is 4A, which means that it can sustain a maximum current for an indefinite period of time without degrading too much.During maximum operation, collector current can be as low as 4A volts.
BUL39D Features
the DC current gain for this device is 10 @ 10mA 5V
a collector emitter saturation voltage of 1.1V
the vce saturation(Max) is 1.1V @ 500mA, 2.5A
the emitter base voltage is kept at 9V
the current rating of this device is 4A
BUL39D Applications
There are a lot of STMicroelectronics
BUL39D applications of single BJT transistors.
- Inverter
- Interface
- Driver
- Muting
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