BUL310FP
- Mfr.Part #
- BUL310FP
- Manufacturer
- STMicroelectronics
- Package / Case
- TO-220-3 Full Pack
- Datasheet
- Download
- Description
- TRANS NPN 500V 5A TO220FP
- Stock
- 1,728
- In Stock :
- 1,728
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- Manufacturer :
- STMicroelectronics
- Product Category :
- Transistors - Bipolar (BJT) - Single
- Configuration :
- Single
- JESD-609 Code :
- e3
- Moisture Sensitivity Level (MSL) :
- 1 (Unlimited)
- Max Collector Current :
- 5A
- Package / Case :
- TO-220-3 Full Pack
- Operating Temperature :
- 150°C TJ
- Length :
- 10.4mm
- Mount :
- Through Hole
- REACH SVHC :
- No SVHC
- Width :
- 4.6mm
- JEDEC-95 Code :
- TO-220AB
- Transistor Application :
- SWITCHING
- Packaging :
- Tube
- Power Dissipation :
- 36W
- Current - Collector Cutoff (Max) :
- 250μA
- Collector Emitter Breakdown Voltage :
- 500V
- Emitter Base Voltage (VEBO) :
- 9V
- Radiation Hardening :
- No
- Number of Elements :
- 1
- Collector Emitter Voltage (VCEO) :
- 500V
- Case Connection :
- Isolated
- Terminal Position :
- Single
- DC Current Gain (hFE) (Min) @ Ic, Vce :
- 6 @ 3A 2.5V
- Pin Count :
- 3
- Collector Base Voltage (VCBO) :
- 1kV
- RoHS Status :
- ROHS3 Compliant
- Polarity/Channel Type :
- NPN
- Transistor Element Material :
- SILICON
- Max Power Dissipation :
- 36W
- Number of Pins :
- 3
- Collector Emitter Saturation Voltage :
- 1.1V
- Transistor Type :
- NPN
- Terminal Finish :
- Matte Tin (Sn) - annealed
- Pbfree Code :
- yes
- Base Part Number :
- BUL310
- Number of Terminations :
- 3
- Vce Saturation (Max) @ Ib, Ic :
- 1.1V @ 600mA, 3A
- Mounting Type :
- Through Hole
- Height :
- 9.3mm
- hFE Min :
- 6
- ECCN Code :
- EAR99
- Datasheets
- BUL310FP

NPN 150°C TJ 250μA 1 Elements 3 Terminations SILICON NPN TO-220-3 Full Pack Tube Through Hole
BUL310FP Overview
In this device, the DC current gain is 6 @ 3A 2.5V, which is the ratio between the base current and the collector current.This system offers maximum design flexibility due to a collector emitter saturation voltage of 1.1V.Single BJT transistor means that Ic is at Single BJT transistors maximum value (saturated), so the vce saturation(Max) is equal to 1.1V @ 600mA, 3A.With the emitter base voltage set at 9V, an efficient operation can be achieved.Single BJT transistor is possible for the collector current to fall as low as 5A volts at Single BJT transistors maximum.
BUL310FP Features
the DC current gain for this device is 6 @ 3A 2.5V
a collector emitter saturation voltage of 1.1V
the vce saturation(Max) is 1.1V @ 600mA, 3A
the emitter base voltage is kept at 9V
BUL310FP Applications
There are a lot of STMicroelectronics
BUL310FP applications of single BJT transistors.
- Inverter
- Interface
- Driver
- Muting
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