BUL3P5

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Mfr.Part #
BUL3P5
Manufacturer
STMicroelectronics
Package / Case
TO-220-3
Datasheet
Download
Description
TRANS PNP 400V 3A TO220
Stock
47,493
In Stock :
47,493

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Manufacturer :
STMicroelectronics
Product Category :
Transistors - Bipolar (BJT) - Single
JESD-609 Code :
e3
Terminal Finish :
Matte Tin (Sn)
Peak Reflow Temperature (Cel) :
NOT SPECIFIED
Transistor Type :
PNP
hFE Min :
10
Power - Max :
60W
Moisture Sensitivity Level (MSL) :
3 (168 Hours)
Time@Peak Reflow Temperature-Max (s) :
NOT SPECIFIED
Collector Emitter Breakdown Voltage :
400V
Package / Case :
TO-220-3
Mount :
Through Hole
Max Collector Current :
3A
RoHS Status :
ROHS3 Compliant
ECCN Code :
EAR99
Polarity/Channel Type :
PNP
Operating Temperature :
150°C TJ
Pin Count :
3
JESD-30 Code :
R-PSFM-T3
Vce Saturation (Max) @ Ib, Ic :
500mV @ 200mA, 1A
JEDEC-95 Code :
TO-220AB
Element Configuration :
Single
Max Power Dissipation :
60W
Reach Compliance Code :
not_compliant
Qualification Status :
Not Qualified
Emitter Base Voltage (VEBO) :
5V
Collector Base Voltage (VCBO) :
500V
Number of Terminations :
3
Number of Elements :
1
Packaging :
Tube
Mounting Type :
Through Hole
Base Part Number :
BUL3P5
Collector Emitter Voltage (VCEO) :
500mV
Current - Collector Cutoff (Max) :
100μA
Transistor Element Material :
SILICON
DC Current Gain (hFE) (Min) @ Ic, Vce :
18 @ 700mA 5V
Transistor Application :
SWITCHING
Datasheets
BUL3P5
Introducing Transistors - Bipolar (BJT) - Single STMicroelectronics BUL3P5 from Chip IC,where excellence meets affordability. This product stands out with its Package / Case:TO-220-3, Operating Temperature:150°C TJ, Number of Terminations:3, Mounting Type:Through Hole, Base Part Number:BUL3P5, BUL3P5 pinout, BUL3P5 datasheet PDF, BUL3P5 amp .Beyond Transistors - Bipolar (BJT) - Single STMicroelectronics BUL3P5 ,we also offer BC817-40,235, BC817-40,215, BC807-40,215, Our vast inventory has you covered. Contact us now for immediate solutions.

STMicroelectronics BUL3P5


PNP 150°C TJ 100μA 1 Elements 3 Terminations SILICON PNP TO-220-3 Tube Through Hole

BUL3P5 Overview


In this device, the DC current gain is 18 @ 700mA 5V, which is calculated by taking the ratio of the base current to collector current and dividing transistor by two.Saturation of VCE means Ic is at its maximum value (saturated), and VCE saturation (Max) is 500mV @ 200mA, 1A.Keeping the emitter base voltage at 5V allows for a high level of efficiency.Maximum collector currents can be below 3A volts.

BUL3P5 Features


the DC current gain for this device is 18 @ 700mA 5V
the vce saturation(Max) is 500mV @ 200mA, 1A
the emitter base voltage is kept at 5V


BUL3P5 Applications


There are a lot of STMicroelectronics
BUL3P5 applications of single BJT transistors.


  • Inverter
  • Interface
  • Driver
  • Muting
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