BUJ303B,127
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- Mfr.Part #
- BUJ303B,127
- Manufacturer
- NXP Semiconductors
- Package / Case
- TO-220-3
- Datasheet
- Download
- Description
- NOW WEEN - BUJ303B - POWER BIPOL
- Stock
- 4,895
- In Stock ：
- 4,895
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- Manufacturer :
- NXP Semiconductors
- Product Category :
- Transistors - Bipolar (BJT) - Single
- RoHS Status :
- RoHS Compliant
- Number of Elements :
- 1
- Transistor Type :
- NPN
- Power - Max :
- 100W
- ECCN Code :
- EAR99
- Reference Standard :
- IEC-134
- Number of Terminations :
- 3
- JEDEC-95 Code :
- TO-220AB
- Configuration :
- Single
- Transistor Element Material :
- SILICON
- Case Connection :
- COLLECTOR
- JESD-30 Code :
- R-PSFM-T3
- Operating Temperature :
- 150°C TJ
- Package / Case :
- TO-220-3
- Transistor Application :
- SWITCHING
- DC Current Gain (hFE) (Min) @ Ic, Vce :
- 23 @ 800mA 3V
- Vce Saturation (Max) @ Ib, Ic :
- 1.5V @ 1A, 3A
- Polarity/Channel Type :
- NPN
- Terminal Finish :
- Tin (Sn)
- Moisture Sensitivity Level (MSL) :
- 1 (Unlimited)
- Mounting Type :
- Through Hole
- Current - Collector (Ic) (Max) :
- 5A
- Terminal Position :
- Single
- Surface Mount :
- No
- Packaging :
- Tube
- Current - Collector Cutoff (Max) :
- 100μA
- JESD-609 Code :
- e3
- Voltage - Collector Emitter Breakdown (Max) :
- 400V
- Datasheets
- BUJ303B,127
NPN 150°C TJ 100μA 1 Elements 3 Terminations SILICON NPN TO-220-3 Tube Through Hole
BUJ303B,127 Overview
This device has a DC current gain of 23 @ 800mA 3V, which is the ratio between the base current and the collector current.A VCE saturation (Max) of 1.5V @ 1A, 3A means Ic has reached its maximum value(saturated).Collector Emitter Breakdown occurs at 400VV - Maximum voltage.
BUJ303B,127 Features
the DC current gain for this device is 23 @ 800mA 3V
the vce saturation(Max) is 1.5V @ 1A, 3A
BUJ303B,127 Applications
There are a lot of WeEn Semiconductors
BUJ303B,127 applications of single BJT transistors.
- Inverter
- Interface
- Driver
- Muting
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