BUJ302A,127
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- Mfr.Part #
- BUJ302A,127
- Manufacturer
- NXP Semiconductors
- Package / Case
- TO-220-3
- Datasheet
- Download
- Description
- NOW WEEN - BUJ302A - POWER BIPOL
- Stock
- 15,825
- In Stock ：
- 15,825
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- Manufacturer :
- NXP Semiconductors
- Product Category :
- Transistors - Bipolar (BJT) - Single
- Case Connection :
- COLLECTOR
- Moisture Sensitivity Level (MSL) :
- 1 (Unlimited)
- Configuration :
- Single
- Operating Temperature :
- 150°C TJ
- Current - Collector Cutoff (Max) :
- 250mA
- DC Current Gain (hFE) (Min) @ Ic, Vce :
- 25 @ 800mA 3V
- Power - Max :
- 80W
- Current - Collector (Ic) (Max) :
- 4A
- Transistor Application :
- SWITCHING
- Base Part Number :
- BUJ302A
- Vce Saturation (Max) @ Ib, Ic :
- 1.5V @ 1A, 3.5A
- Transistor Element Material :
- SILICON
- Mounting Type :
- Through Hole
- Packaging :
- Tube
- JESD-30 Code :
- R-PSFM-T3
- ECCN Code :
- EAR99
- Reference Standard :
- IEC-60134
- JEDEC-95 Code :
- TO-220AB
- RoHS Status :
- RoHS Compliant
- Package / Case :
- TO-220-3
- Number of Elements :
- 1
- Number of Terminations :
- 3
- Transistor Type :
- NPN
- Terminal Position :
- Single
- Voltage - Collector Emitter Breakdown (Max) :
- 400V
- Surface Mount :
- No
- Polarity/Channel Type :
- NPN
- Datasheets
- BUJ302A,127
NPN 150°C TJ 250mA 1 Elements 3 Terminations SILICON NPN TO-220-3 Tube Through Hole
BUJ302A,127 Overview
In this device, the DC current gain is 25 @ 800mA 3V, which is the ratio between the base current and the collector current.Single BJT transistor means that Ic is at Single BJT transistors maximum value (saturated), so the vce saturation(Max) is equal to 1.5V @ 1A, 3.5A.There is a 400V maximal voltage in the device due to collector-emitter breakdown.
BUJ302A,127 Features
the DC current gain for this device is 25 @ 800mA 3V
the vce saturation(Max) is 1.5V @ 1A, 3.5A
BUJ302A,127 Applications
There are a lot of WeEn Semiconductors
BUJ302A,127 applications of single BJT transistors.
- Inverter
- Interface
- Driver
- Muting
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