BUJ303B,127

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Mfr.Part #
BUJ303B,127
Manufacturer
WeEn Semiconductors Co., Ltd
Package / Case
TO-220-3
Datasheet
Download
Description
TRANS NPN 400V 5A TO220AB
Stock
4,895
In Stock :
4,895

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Manufacturer :
WeEn Semiconductors Co., Ltd
Product Category :
Transistors - Bipolar (BJT) - Single
Transistor Type :
NPN
Operating Temperature :
150°C TJ
Transistor Application :
SWITCHING
RoHS Status :
RoHS Compliant
Vce Saturation (Max) @ Ib, Ic :
1.5V @ 1A, 3A
Transistor Element Material :
SILICON
JEDEC-95 Code :
TO-220AB
JESD-30 Code :
R-PSFM-T3
Mounting Type :
Through Hole
Power - Max :
100W
Number of Elements :
1
Configuration :
Single
Polarity/Channel Type :
NPN
JESD-609 Code :
e3
Number of Terminations :
3
Current - Collector Cutoff (Max) :
100μA
Surface Mount :
No
Packaging :
Tube
Moisture Sensitivity Level (MSL) :
1 (Unlimited)
Current - Collector (Ic) (Max) :
5A
Terminal Finish :
Tin (Sn)
Reference Standard :
IEC-134
Case Connection :
COLLECTOR
Voltage - Collector Emitter Breakdown (Max) :
400V
Package / Case :
TO-220-3
DC Current Gain (hFE) (Min) @ Ic, Vce :
23 @ 800mA 3V
Terminal Position :
Single
ECCN Code :
EAR99
Datasheets
BUJ303B,127
Introducing Transistors - Bipolar (BJT) - Single WeEn Semiconductors Co., Ltd BUJ303B,127 from Chip IC,where excellence meets affordability. This product stands out with its Operating Temperature:150°C TJ, Mounting Type:Through Hole, Number of Terminations:3, Package / Case:TO-220-3, BUJ303B,127 pinout, BUJ303B,127 datasheet PDF, BUJ303B,127 amp .Beyond Transistors - Bipolar (BJT) - Single WeEn Semiconductors Co., Ltd BUJ303B,127 ,we also offer BC817-40,235, BC817-40,215, BC807-40,215, Our vast inventory has you covered. Contact us now for immediate solutions.

WeEn Semiconductors Co., Ltd BUJ303B,127


NPN 150°C TJ 100μA 1 Elements 3 Terminations SILICON NPN TO-220-3 Tube Through Hole

BUJ303B,127 Overview


This device has a DC current gain of 23 @ 800mA 3V, which is the ratio between the base current and the collector current.A VCE saturation (Max) of 1.5V @ 1A, 3A means Ic has reached its maximum value(saturated).Collector Emitter Breakdown occurs at 400VV - Maximum voltage.

BUJ303B,127 Features


the DC current gain for this device is 23 @ 800mA 3V
the vce saturation(Max) is 1.5V @ 1A, 3A


BUJ303B,127 Applications


There are a lot of WeEn Semiconductors
BUJ303B,127 applications of single BJT transistors.


  • Inverter
  • Interface
  • Driver
  • Muting
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