BUJ303A,127
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- Mfr.Part #
- BUJ303A,127
- Manufacturer
- NXP Semiconductors
- Package / Case
- TO-220-3
- Datasheet
- Download
- Description
- TRANS NPN 1000V 5A TO220AB
- Stock
- 5,758
- In Stock ：
- 5,758
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- Manufacturer :
- NXP Semiconductors
- Product Category :
- Unclassified
- Package / Case :
- TO-220-3
- Vce Saturation (Max) @ Ib, Ic :
- 1.5V @ 600mA, 3A
- Transistor Element Material :
- SILICON
- Number of Terminations :
- 3
- Case Connection :
- COLLECTOR
- Transistor Type :
- NPN
- Moisture Sensitivity Level (MSL) :
- 1 (Unlimited)
- Mounting Type :
- Through Hole
- Operating Temperature :
- 150°C TJ
- JEDEC-95 Code :
- TO-220AB
- JESD-30 Code :
- R-PSFM-T3
- Packaging :
- Tube
- Current - Collector (Ic) (Max) :
- 5A
- RoHS Status :
- RoHS Compliant
- Number of Elements :
- 1
- Transistor Application :
- SWITCHING
- Terminal Position :
- Single
- ECCN Code :
- EAR99
- Reference Standard :
- IEC-60134
- Current - Collector Cutoff (Max) :
- 100μA
- Surface Mount :
- No
- Power - Max :
- 100W
- DC Current Gain (hFE) (Min) @ Ic, Vce :
- 14 @ 500mA 5V
- Voltage - Collector Emitter Breakdown (Max) :
- 500V
- Polarity/Channel Type :
- NPN
- Configuration :
- Single
- Datasheets
- BUJ303A,127
NPN 150°C TJ 100μA 1 Elements 3 Terminations SILICON NPN TO-220-3 Tube Through Hole
BUJ303A,127 Overview
In this device, the DC current gain is 14 @ 500mA 5V, which is calculated by taking the ratio of the base current to collector current and dividing transistor by two.Saturation of VCE means Ic is at its maximum value (saturated), and VCE saturation (Max) is 1.5V @ 600mA, 3A.The device exhibits a collector-emitter breakdown at 500V.
BUJ303A,127 Features
the DC current gain for this device is 14 @ 500mA 5V
the vce saturation(Max) is 1.5V @ 600mA, 3A
BUJ303A,127 Applications
There are a lot of WeEn Semiconductors
BUJ303A,127 applications of single BJT transistors.
- Inverter
- Interface
- Driver
- Muting
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